User guide

DMN1025UFDB
Document number: DS36668 Rev. 2 - 2
4 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN1025UFDB
0.01
0.015
0.02
0.025
0.03
0.035
0.04
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)

V= V
I = 4.8A
GS
D
2.5
V= V
I = 2.5A
GS
D
1.8
V = 4.5V
I= 5A
GS
D
0
0.2
0.4
0.6
0.8
1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

I= 1mA
D
I = 250µA
D
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
0
3
6
9
12
15
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
ENT (A)
S
T= -55°C
A
T= 25°C
A
T= 85°C
A
T = 125°C
A
T = 150°C
A
0.01
0.1
1
10
100
1000
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 SOA, Safe Operation Area
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P= 10ms
W
P = 1ms
W
P = 100µs
W
T = 150°C
T = 25°C
V = 4.5V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
r(t), T
R
ANSIENT T
H
E
R
MAL
R
ESISTAN
C
E
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R (t) = r(t) * R
R = 178°C/W
Duty Cycle, D = t1/ t2


JA JA
JA
D = 0.9