Manual
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
2 of 6
www.diodes.com
June 2009
© Diodes Incorporated
DMG8822UTS
NEW PRODUCT
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current
I
DSS
- - 1.0 A
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±100 nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS
(
th
)
0.5 - 0.9 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
-
19
22
28
25
29
37
m
V
GS
= 4.5V, I
D
= 8.2A
V
GS
= 2.5V, I
D
= 3.3A
V
GS
= 1.8V, I
D
= 2.0A
Forward Transfer Admittance
|Y
fs
|
- 7 - S
V
DS
= 10V, I
D
= 4A
Diodes Forward Voltage
V
SD
- 0.7 0.9 V
Is = 2.25A, V
GS
= 0V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
- 841 -
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 88 -
pF
Reverse Transfer Capacitance
C
rss
- 81 -
pF
Gate Resistance
R
g
- 1.24 -
V
DS
=0V, V
GS
= 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g
- 9.6 -
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 8.2A
Gate-Source Charge
Q
g
s
- 1.4 -
nC
Gate-Drain Charge
Q
g
d
- 2.1 -
nC
Turn-On Delay Time
t
D
(
on
)
-
7.8
- ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 10, R
G
= 6
Turn-On Rise Time
t
r
-
21.1
- ns
Turn-Off Delay Time
t
D
(
off
)
-
38.6
- ns
Turn-Off Fall Time
t
f
-
10.1
- ns
Notes: 5. Short duration pulse test used to minimize self-heating effects.
6. Guaranteed by design. Not subject to production testing.
0
10
20
30
0 0.5 1 1.5 2
V = 1.5V
GS
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 1.8V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 2.8V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.5V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
0
5
10
15
20
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A