Instruction Manual
DMG6968UTS
Document number: DS31793 Rev. 5 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMG6968UTS
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 4)
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
5.2
3.5
A
Pulsed Drain Current
I
DM
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
P
D
1.0 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C R
JA
125 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current
I
DSS
- - 1.0
μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - 10
μA
V
GS
= ±10V, V
DS
= 0V
Gate-Source Breakdown Voltage
BV
SGS
±12 - - V
V
DS
= 0V, I
G
= ±250μA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS
(
th
)
0.35 - 0.95 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
-
-
-
18
21
26
23
27
34
m
V
GS
= 4.5V, I
D
= 6.5A
V
GS
= 2.5V, I
D
= 5.5A
V
GS
= 1.8V, I
D
= 3.5A
Forward Transfer Admittance
|Y
fs
|
- 13 - S
V
DS
= 5V, I
D
= 5A
Diode Forward Voltage
V
SD
- 0.7 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
-
143
- pF
V
DS
=10V, V
GS
= 0V f = 1.0MHz
Output Capacitance
C
oss
-
74
- pF
Reverse Transfer Capacitance
C
rss
-
29
- pF
Gate Resistance
R
g
- 202 -
V
DS
=0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
-
8.8
- nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6.5A
Gate-Source Charge
Q
g
s
-
1.4
- nC
Gate-Drain Charge
Q
g
d
-
3.0
- nC
Turn-On Delay Time
t
D
(
on
)
-
53
- ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 10, R
G
= 6
Turn-On Rise Time
t
r
-
78
- ns
Turn-Off Delay Time
t
D
(
off
)
-
562
- ns
Turn-Off Fall Time
t
f
-
234
- ns
Notes: 4. Device mounted on FR-4 PCB.
5. Short duration pulse test used to minimize self-heating effect.






