User Manual
DMG6898LSD
Document number: DS31947 Rev. 4 - 2
2 of 6
www.diodes.com
March 2012
© Diodes Incorporated
DMG6898LSD
NEW PRODUCT
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 4)
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
9.5
7.1
A
Pulsed Drain Current (Note 5)
I
DM
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
P
D
1.28 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 4) R
θJA
99.3 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0 μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±10 μA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
0.5 1.0 1.5 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
-
11
17
16
23
mΩ
V
GS
= 4.5V, I
D
= 9.4A
V
GS
= 2.5V, I
D
= 8.3A
Forward Transfer Admittance
|Y
fs
|
- 17 - S
V
DS
= 5V, I
D
= 9.4A
Diode Forward Voltage
V
SD
- 0.7 1.2 V
V
GS
= 0V, I
S
= 1.3A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
-
1149
- pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
-
157
- pF
Reverse Transfer Capacitance
C
rss
-
142
- pF
Gate Resistance
R
g
-
1.51
- Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
-
11.6
- nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 9.4A
Total Gate Charge (V
GS
= 10V) Q
g
-
26
- nC
Gate-Source Charge
Q
g
s
-
2.7
- nC
Gate-Drain Charge
Q
g
d
-
3.4
- nC
Turn-On Delay Time
t
D
(
on
)
-
11.67
- ns
V
DD
= 10V, V
GS
= 4.5V,
R
GEN
= 6Ω, I
D
= 1A
Turn-On Rise Time
t
r
-
12.49
- ns
Turn-Off Delay Time
t
D
(
off
)
-
35.89
- ns
Turn-Off Fall Time
t
f
-
12.33
- ns
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.