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DMG6898LSD

Document number: DS31947 Rev. 4 - 2

1 of 6

www.diodes.com

March 2012

DMG6898LSD

NEW PRODUCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.072 grams (approximate)

Ordering Information (Note 3)

Part Number Qualification Case Packaging

DMG6898LSD-13 Commercial SO-8 2500 / Tape & Reel

DMG6898LSDQ-13 Automotive SO-8 2500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View Top View

Internal Schematic

Logo

Part no.

Year: “08” = 2008

“09” = 2009

Xth week: 01 ~ 53

1 4

8 5

G6898LD

ESD PROTECTED TO 2kV

Summary of content (6 pages)

PAGE 1
DMG6898LSD NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound.
PAGE 2
DMG6898LSD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) Unit V V IDM Value 20 ±12 9.5 7.1 30 Symbol PD RθJA TJ, TSTG Value 1.28 99.
PAGE 3
DMG6898LSD 20 20 VGS = 8.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V VGS = 2.5V VGS = 2.0V 10 5 15 VDS = 10V 10 5 TA = 150°C VGS = 1.8V T A = 125°C TA = 85°C T A = 25°C TA = -55°C VGS = 1.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.06 0.05 0.04 VGS = 1.8V 0.03 0.02 VGS = 2.5V VGS = 4.5V 0.01 0 0 2 1.2 VGS = 4.5V ID = 500mA 0.8 VGS = 2.5V ID = 150mA 0.6 0.4 -50 0.03 TA = 125°C T A = 85°C T A = 25°C 0.
PAGE 4
DMG6898LSD 20 1.4 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.6 1.2 ID = 1mA 1.0 ID = 250µA 0.8 0.6 0.4 15 T A = 25°C 10 5 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,800 0 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMG6898LSD r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 205°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 100 1,000 Package Outline Dimensions 0.
PAGE 6
DMG6898LSD NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).