User Manual

DMG4932LSD
Document number: DS32119 Rev. 4 - 2
5 of 9
www.diodes.com
August 2010
© Diodes Incorporated
DMG4932LSD
NEW PRODUCT
Electrical Characteristics – Q2 @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
- - 1 μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - +100
nA
V
GS
= +25V, V
DS
= 0V
- - -800
V
GS
= -25V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
1.0 - 2.3 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
-
12
16
15.8
23
mΩ
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
Forward Transfer Admittance
|Y
fs
|
- 8 - S
V
DS
= 10V, I
D
= 9A
Diode Forward Voltage
V
SD
- 0.65 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 675 -
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 98 -
pF
Reverse Transfer Capacitance
C
rss
- 90 -
pF
Gate Resistance
R
g
- 1.6 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (4.5V)
Q
g
- 7.8 -
nC
V
DS
= 15V, V
GS
= 10V, I
D
= 9A
Total Gate Charge (10V)
Q
g
- 16.0 -
nC
Gate-Source Charge
Q
g
s
- 1.9 -
nC
Gate-Drain Charge
Q
g
d
- 2.6 -
nC
Turn-On Delay Time
t
D
(
on
)
- 5.05 -
ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3Ω, R
L
= 1.7Ω
Turn-On Rise Time
t
r
- 9.21 -
ns
Turn-Off Delay Time
t
D
(
off
)
- 20.76 -
ns
Turn-Off Fall Time
t
f
- 4.94 -
ns
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
0 0.5 1 1.5 2
Fig. 12 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
10
15
20
25
30
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
5
V = 2.0V
GS
V = 2.2V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 3.5V
GS
V = 4.0V
GS
V = 4.5V
GS
0 0.5 1 1.5 2 2.5 3
Fig. 13 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
25
30
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 85°C
GS
V = 125°C
GS
V = 25°C
GS
V = -55°C
GS
V = 150°C
GS
V = 5V
DS