User Manual

DMG4822SSD
Document number: DS35403 Rev. 2 - 2
5 of 7
www.diodes.com
February 2014
© Diodes Incorporated
DMG4822SSD
NEW PRODUCT
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J

V,
G
ate
T
hreshold Voltage
GS(th)
Vth (V) @ I =1mA
D
Vth (V) @ I =250µA
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig.8 Diode Forward Voltage vs. Current
I , SOURCE CURRENT (V)
S
V (V)@T =25°C
SD A
1
10
100
1000
10000
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
I , DRAIN LEAKAGE CURRENT (nA)
DSS
I (nA) Ave @ 25°C
DSS
I (nA) Ave @ 85°C
DSS
I (nA) Ave @ 125°C
DSS
I (nA) Ave @ 150°C
DSS
10
100
1000
048121620
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C , JUNCTION CAPACITANCE (pF)
T
Ciss Ave(pF)
Coss Ave(pF)
Crss Ave(pF)
f=1MHz
0
2
4
6
8
10
024 681012
Q - (nC)
G
Fig. 11 Gate Charge
V (V)
GS
V =15V, I =10A
DS D