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DMG4800LSD

Document number: DS31858 Rev. 6 - 2

1 of 6

www.diodes.com

March 2013

DMG4800LSD

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

max

= +25°C

30V

16m @ V

= 10V

9.8A

22m @ V

= 4.5V

8.4A

Description

This MOSFET has been designed to minimize the on-state resistance

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

Features and Benefits

 100% avalanche rated part

 Low R

DS(on)

- minimizes conduction losses

 Low Q

- minimizes switching losses

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.076 grams (approximate)

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMG4800LSD-13 Standard SO-8 2500 / Tape & Reel

DMG4800LSDQ-13 Automotive SO-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

Top View Pin Configuration

Internal Schematic

N-Channel MOSFET N-Channel MOSFET

Top View

Logo

Part no.

Year: “10” = 2010

“11” = 2011

1 4

8 5

G4800LD

Xth week: 01 ~ 53

SO-8

Top View

Summary of content (6 pages)

PAGE 1
DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) max ID max TA = +25°C   16mΩ @ VGS = 10V 9.8A  Low Qg - minimizes switching losses 8.4A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 standards for High Reliability V(BR)DSS 30V Features and Benefits 22mΩ @ VGS = 4.
PAGE 2
DMG4800LSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 30 ±25 7.5 6.0 ID 9.8 7.7 A ID 6.4 5.0 A 8.4 6.
PAGE 3
DMG4800LSD 30 30 VGS = 10V 25 25 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 3.0V 15 10 VGS = 2.5V 0 15 10 5 VGS = 2.0V 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 2 1 0.1 VGS = 2.5V 0.01 VGS = 4.5V 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE () 1.2 VGS = 4.5V ID = 10A VGS = 10V ID = 11.6A 0.6 -50 0 0.5 1 1.5 2 2.5 3 3.
PAGE 4
DMG4800LSD 20 TA = 25°C 1.6 1.2 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 ID = 1mA ID = 250µA 0.8 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 8 4 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMG4800LSD r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA R JA = 106°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 0.
PAGE 6
DMG4800LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).