User guide

DMG4496SSS
Document number: DS32048 Rev. 5 - 2
4 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4496SSS
NEW PRODUCT
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 1mA
D
I = 250µA
D
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
2
4
6
8
10
12
14
16
18
20
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
04 8121620
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
1,000
C
,
C
A
P
A
C
I
T
A
N
C
E (p
F
)
100
C
iss
C
rss
C
oss
f = 1MHz
0 5 10 15 20 25 30
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001 0.01 0.1 1 10 100
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 1,0000.0001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12

R (t) = r(t) *
 JA
R
R = 90°C/W


JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5