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DMG4496SSS

Document number: DS32048 Rev. 5 - 2

1 of 6

www.diodes.com

September 2013

DMG4496SSS

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

max

= +25°C

30V

21.5m @ V

= 10V

10A

29m @ V

= 4.5V

Description

This MOSFET has been designed to minimize the on-state resistance

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

Ordering Information (Note 4 & 5)

Part Number Compliance Case Packaging

DMG4496SSS-13 Standard SO-8 2500 / Tape & Reel

DMG4496SSSQ-13 Automotive SO-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SO-8

Top View

Internal Schematic

Top View

Equivalent circuit

Chengdu A/T Site Shanghai A/T Site

= Manufacturer’s Marking

G4496SS = Product Type Marking Code

YYWW = Date Code Marking

YY or YY = Year (ex: 13 = 2013)

WW = Week (01 - 53)

YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 4

8 5

G4496SS

1 4

8 5

G4496SS

Summary of content (6 pages)

PAGE 1
DMG4496SSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C  Low On-Resistance  Low Input Capacitance 21.5mΩ @ VGS = 10V 10A  Fast Switching Speed 8A  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS NEW PRODUCT 30V Features and Benefits 29mΩ @ VGS = 4.
PAGE 2
DMG4496SSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V ID 10 6 A IDM 60 A Steady State Continuous Drain Current (Note 6) TA = +25°C TA = +85°C Pulsed Drain Current (Note 7) Avalanche Current (Notes 7 & 8) IAR 8 A Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH EAR 3.2 mJ Symbol Value Unit PD 1.42 W RθJA 88.
PAGE 3
DMG4496SSS 30 20 VGS = 10V VDS = 5V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 4.0V 15 VGS = 3.5V 10 5 15 10 VGS = 150°C VGS = 125°C VGS = 85°C 5 VGS = 3.0V VGS = 25°C VGS = 2.5V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.05 0.04 VGS = 3.5V 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1.7 VGS = 4.
PAGE 4
DMG4496SSS 20 VGS(TH), GATE THRESHOLD VOLTAGE (V) 18 1.8 IS, SOURCE CURRENT (A) 16 1.6 ID = 1mA 1.4 1.2 ID = 250µA 1.0 0.8 1,000 TA = 25°C 12 10 8 6 4 0 IDSS, LEAKAGE CURRENT (nA) Coss 100 Crss 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 f = 1MHz Ciss 10 14 2 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig.
PAGE 5
DMG4496SSS Package Outline Dimensions 0.254 NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8  All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.
PAGE 6
DMG4496SSS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).