Instruction Manual

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DMG1016V

Document number: DS31767 Rev. 3 - 2

1 of 8

www.diodes.com

May 2009

DMG1016

NEW PRODUCT

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage V

GS(th)

<1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 2)

• ESD Protected Gate to 2.5kV HBM

• "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 7

• Ordering Information: See Page 7

• Weight: 0.006 grams (approximate)

Maximum Ratings N-CHANNEL – Q

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain Source Voltage

DSS

20 V

Gate-Source Voltage

GSS

±6

Drain Current (Note 1)

= 25°C

= 85°C

870

630

Maximum Ratings P-CHANNEL – Q

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain Source Voltage

DSS

-20 V

Gate-Source Voltage

GSS

±6

Drain Current (Note 1)

= 25°C

= 85°C

-640

-460

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 1)

530 mW

Thermal Resistance, Junction to Ambient (Note 1)

235

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Notes: 1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

SOT-563

TOP VIEW

Internal Schematic

BOTTOM VIEW

ESD PROTECTED TO 2.5kV HBM

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Summary of content (8 pages)

PAGE 1
DMG1016V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage VGS(th) <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) ESD Protected Gate to 2.
PAGE 2
DMG1016V Electrical Characteristics N-CHANNEL – Q1 NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 ± 1.0 V nA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V 0.3 0.4 0.5 0.4 0.5 0.
PAGE 3
DMG1016V N-CHANNEL – Q1 1.0 1.0 VGS = 8.0V VGS = 4.5V 0.8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V 0.6 VGS = 2.5V VGS = 2.0V 0.4 VGS = 1.5V 0.6 0.4 T A = 150°C 0.2 0.2 TA = 125°C VGS = 1.2V TA = -55°C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 5 0.8 0.7 0.6 0.5 0.4 VGS = 1.8V 0.3 VGS = 2.5V VGS = 4.5V 0.2 0.1 0 0 T A = 85°C TA = 25°C 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs.
PAGE 4
DMG1016V N-CHANNEL – Q1 (continued) IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0 1.2 0.8 ID = 1mA ID = 250µA 0.4 0.8 TA = 25°C 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 100 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMG1016V P-CHANNEL – Q2 1.0 1.0 VGS = -8.0V VGS = -4.5V VDS = -5V -ID, DRAIN CURRENT (A) VGS = -3.0V 0.6 VGS = -2.5V VGS = -2.0V 0.4 0.2 0.8 0.6 0.4 T A = 150°C 0.2 VGS = -1.5V TA = 125°C TA = 85°C T A = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristic 0 5 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 1.4 1.2 VGS = -1.8V 1.0 0.8 VGS = -2.5V 0.6 0.4 VGS = -4.5V 0.2 0 0 0.2 0.
PAGE 6
DMG1016V P-CHANNEL – Q2 (continued) 1.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 ID = -1mA 0.8 ID = -250µA 0.4 0.8 TA = 25°C 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature 0 0.2 100 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs.
PAGE 7
DMG1016V Ordering Information (Note 5) Part Number DMG1016V-7 NEW PRODUCT Notes: Case SOT-563 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
PAGE 8
DMG1016V IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).