User Manual

DMC4047LSD
Document number: DS36206 Rev. 4 - 2
2 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMC4047LSD
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue_Q2
V
alue_Q1 Units
Drain-Source Voltage
V
DSS
40 -40 V
Gate-Source Voltage
V
GSS
±20 ±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.0
5.6
-5.1
-4.1
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
9.0
7.2
-6.5
-5.2
A
Maximum Body Diode Forward Current (Note 6)
I
S
2.5 -2.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
70 -40 A
Avalanche Current (Notes 7) L = 0.1mH
I
AR
20 20 A
Repetitive Avalanche Energy (Notes 7) L = 0.1mH
E
AR
20 20 mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R

JA
98
°C/W
t<10s 59
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.8
W
T
A
= +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
71
°C/W
t<10s 43
Thermal Resistance, Junction to Case (Note 6)
R
JC
11.8
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics N-Channel Q2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
40
 
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
 
1 µA
V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
 
100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.4

2.4 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)

15 24
m
V
GS
= 10V, I
D
= 6A

20 32
V
GS
= 4.5V, I
D
= 5A
Diode Forward Voltage
V
SD

0.7 1.0 V
V
GS
= 0V, I
S
= 1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss

1060

pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss

84

Reverse Transfer Capacitance
C
rss

58

Gate Resistance
R
G

1.6


V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g

8.8

nC
V
DS
= 20V, I
D
= 8A
Total Gate Charge (V
GS
= 10V) Q
g

19.1

Gate-Source Charge
Q
gs

3.0

Gate-Drain Charge
Q
gd

2.5

Turn-On Delay Time
t
D(on)

5.3

nS
V
DD
= 25V, R
L
= 2.5
V
GS
= 10V, R
G
= 3
Turn-On Rise Time
t
r

7.1

Turn-Off Delay Time
t
D(off)

15.1

Turn-Off Fall Time
t
f

4.8

Body Diode Reverse Recovery Time
t
rr

10.5

nS
I
F
= 8A, di/dt = 100A/s
Body Diode Reverse Recovery Charge
Q
rr

4.15

nC
I
F
= 8A, di/dt = 100A/s