User guide

DMC3021LSD
Document number: DS32152 Rev. 2 - 2
2 of 8
www.diodes.com
February 2014
© Diodes Incorporated
DMC3021LSD
NEW PRODUCT
Maximum Ratings N-CHANNEL – Q2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
8.5
7.1
A
Pulsed Drain Current (Note 6)
I
DM
26 A
Maximum Ratings P-CHANNEL – Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Unit
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
-7.0
-4.5
A
Pulsed Drain Current (Note 6)
I
DM
-25 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
V
alue Unit
Power Dissipation (Note 5)
P
D
2.5 W
Thermal Resistance, Junction to Ambient (Note 5)
R
θJA
50 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics N-CHANNEL – Q2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
— —
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
1.0 µA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 1.45 2.1 V
V
DS
= V
GS
, I
C
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
—
14 21
mΩ
V
GS
= 10V, I
C
= 7A
18 32
V
GS
= 4.5V, I
C
= 5.6A
Forward Transfer Admittance
|Y
fs
|
—
8.1 — S
V
DS
= 5V, I
C
= 7A
Diode Forward Voltage (Note 7)
V
SD
—
0.7 1.0 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 767 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 110 —
pF
Reverse Transfer Capacitance
C
rss
— 105 —
pF
Gate Resistance
R
g
— 1.4 —
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 7.8 —
nC
V
DS
= 15V, I
D
= 9A
Total Gate Charge (V
GS
= 10V) Q
g
— 16.1 —
nC
Gate-Source Charge
Q
gs
— 1.8 —
nC
Gate-Drain Charge
Q
gd
— 2.5 —
nC
Turn-On Delay Time
t
D(on)
— 5.0 —
ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 6Ω , I
D
= 1A
Turn-On Rise Time
t
r
— 4.5 —
ns
Turn-Off Delay Time
t
D(off)
— 26.3 —
ns
Turn-Off Fall Time
t
f
— 8.55 —
ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.