User guide

POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 0
4 of 9
www.diodes.com
April 2014
© Diodes Incorporated
DMC1017UPD
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
0
0.5
1
1.5
-50 -25 0 25 50 75 100 125 150
I= 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 125°C
A
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T = 150°C
A
T = -55°C
A
T= 25°C
A
T= 85°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (pF)
T
10
100
1000
10000
024681012
f = 1MHz
C
iss
C
oss
C
rss
Q(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
0
2
4
6
8
0 5 10 15 20 25 30 35 40
V= 6V
I= A
DS
D
11.8