Instruction Manual

BSS84
Document number: DS30149 Rev. 20 - 2
3 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BSS84
0
50
100
25 50 75 100
125 150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
400
0
-600
-500
-400
-300
-200
-100
0-2-1 -5-4-3
I, D
R
AIN-S
O
U
R
C
E
C
U
R
R
EN
T
(mA)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
DS
0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2-3-4-1
-8-7
-6-5
I, D
R
AIN-
C
U
R
R
EN
T
(A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 3 Drain-Current vs. Gate-Source Voltage
GS
0
1
2
4
5
3
6
8
7
10
9
0
-1
-2 -3 -4 -5
V , GATE-SOURCE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
T= 25C
A
°
T = 125C
A
°
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)

0
3
6
9
12
15
-50
-25 0
25 50 12510075 150
T , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS(ON)

0.0
5.0
10.0
0.0
-0.2 -0.4 -0.6
-0.8
-1.0
I , DRAIN-CURRENT (A)
Fig. 6 On-Resistance vs. Drain-Current
D
15.0
20.0
25.0
R , ON-RESISTANCE ( )
DS(ON)
