User guide

BS870
Document number: DS11302 Rev. 18 - 2
3 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BS870
0
0.2
0.4
0.6
0.8
1.0
01
2
3
45
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I DRAIN-SOURCE CURRENT (A)
D
,
0
1
2
3
4
5
00.2
R
, N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45
70
95 120 145
R
, N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
j
°
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 8 1012141618
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
0
50
100
25 50
75
100 125
150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 5 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
400