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BC857BLP4

Document number: DS31361 Rev. 5 - 2

1 of 5

www.diodes.com

February 2011

BC857BLP4

45V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Die Construction

• Ultra-Small Leadless Surface Mount Package

• Ultra-low Profile (0.40mm max)

• Complementary NPN Type Available (BC847BLP4)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

Mechanical Data

• Case: DFN1006H4-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0008 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

BC857BLP4-7 F2 7 8 3,000

BC857BLP4-7B F2 7 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Device Schematic

Bottom View

F2 = Product Type Marking Code

DFN1006H4-3

Device Symbol

BC857BLP4-7 BC857BLP4-7B

Top View

Bar Denotes Base

and Emitter Side

Top View

Dot Denotes

Collector Side

F2F2

Summary of content (5 pages)

PAGE 1
BC857BLP4 45V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Die Construction Ultra-Small Leadless Surface Mount Package Ultra-low Profile (0.40mm max) Complementary NPN Type Available (BC847BLP4) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) • • • Case: DFN1006H4-3 Case Material: Molded Plastic, "Green" Molding Compound.
PAGE 2
BC857BLP4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value -50 -45 -5.
PAGE 3
BC857BLP4 100 -IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 IB = -0.5mA 80 IB = -0.4mA 60 IB = -0.3mA IB = -0.2mA 40 IB = -0.1mA 20 RθJA = 500 °C/W 0 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 150 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 500 400 300 200 100 0 10 100 1.0 0.8 0.6 0.4 0.
PAGE 4
BC857BLP4 Package Outline Dimensions DFN1006H4-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm A A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout C X1 X G2 G1 Y Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z BC857BLP4 Document number: DS31361 Rev. 5 - 2 4 of 5 www.diodes.
PAGE 5
BC857BLP4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.