User guide
BC847BVN
Document number: DS30627 Rev. 6 - 2
2 of 6
www.diodes.com
May 2013
© Diodes Incorporated
BC847BVN
Maximum Ratings: NPN, BC847B Type (Q
1
) (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
100 mA
Peak Collector Current
I
CM
200 mA
Peak Emitter Current
I
EM
200 mA
Maximum Ratings: PNP, BC857B Type (Q
2
) (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-45 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current
I
C
-100 mA
Peak Collector Current
I
CM
-200 mA
Peak Emitter Current
I
EM
-200 mA
Thermal Characteristics – Total Device (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) Total Device
P
D
150 mW
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
833 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150 °C
Note: 6. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
Thermal Characteristics – Total Device
-50
050100150
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1. Power Dissipation vs. Ambient Temperature
Total Device
A
°
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
R = 833 C/W
JA