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BC847BLP4

Document number: DS31297 Rev. 6 - 2

1 of 5

www.diodes.com

February 2011

BC847BLP4

45V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Die Construction

• Ultra-Small Leadless Surface Mount Package

• Ultra Low Profile (0.4mm max)

• Complementary PNP Type Available (BC857BLP4)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free "Green" Device (Note 2)

Mechanical Data

• Case: DFN1006H4-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0008 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

BC847BLP4-7 F1 7 8mm 3,000

BC847BLP4-7B F1 7 8mm 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Device Schematic

Bottom View

DFN1006H4-3

Device Symbol

F1 = Product Type Marking Code

BC847BLP4-7 BC847BLP4-7B

Top View

Bar Denotes Base

and Emitter Side

Top View

Dot Denotes

Collector Side

F1F1

Summary of content (5 pages)

PAGE 1
BC847BLP4 45V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Die Construction Ultra-Small Leadless Surface Mount Package Ultra Low Profile (0.4mm max) Complementary PNP Type Available (BC857BLP4) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) • • • Case: DFN1006H4-3 Case Material: Molded Plastic, "Green" Molding Compound.
PAGE 2
BC847BLP4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value 50 45 6.
PAGE 3
BC847BLP4 300 100 IC, COLLECTOR CURRENT (mA) PD , POWER DISSIPATION (mW) IB = 0.5mA 250 200 150 100 50 0 0 RθJA = 500 °C/W IB = 0.3mA 60 IB = 0.2mA 40 IB = 0.1mA 20 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 0 150 600 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 5 0.3 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN IB = 0.4mA 80 400 200 IC/IB = 20 0.
PAGE 4
BC847BLP4 Package Outline Dimensions A DFN1006H4-3 Dim Min Max Typ A 0.40 ⎯ ⎯ A1 0 0.05 0.02 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm A1 D b1 E e b2 L2 L3 L1 Suggested Pad Layout C X1 X G2 G1 Y Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z BC847BLP4 Document number: DS31297 Rev. 6 - 2 4 of 5 www.diodes.
PAGE 5
BC847BLP4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.