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2DB1182Q

Document number: DS35651 Rev. 1 - 2

1 of 5

www.diodes.com

November 2011

2DB1182Q

32V PNP SURFACE MOUNT TRANSISTOR IN TO252

Features

• Epitaxial Planar Die Construction

• Low Collector-Emitter Saturation Voltage

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin, Solderable per MIL-STD-202,

Method 208

• Weight: 0.34 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

2DB1182Q-13 2DB1182Q 13 16 2,500

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

2DB1182Q = Product Type Marking Code

= Manufacturers’ code marking

YYWW = Date Code Marking

YY = Last Digit of Year, (ex: 08 = 2008)

WW = Week Code (01 - 53)

Top View

Device Schematic

Pin Out Configuration

Top view

TO252

YYWW

2DB1182Q

Summary of content (5 pages)

PAGE 1
2DB1182Q 32V PNP SURFACE MOUNT TRANSISTOR IN TO252 Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: TO252 Case Material: Molded Plastic, "Green" Molding Compound.
PAGE 2
DB1182Q Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value -40 -32 -5 -2 -3 Unit V V V A A Value 10 -55 to +150 Unit W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation Operating and Storage Temperature Range Symbol PD TJ, TSTG Electrical Characteristics @TA = 25°C unless
PAGE 3
0.4 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.3 0.2 TA = 150°C TA = 125°C 0.1 T A = 85°C TA = 25°C T A = -55°C 0 0.001 1.2 VCE = -3V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 125°C 0.2 TA = 150°C 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.2 f = 1MHz IC/IB = 10 1.0 0.8 CAPACITANCE (pF) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.01 0.
PAGE 4
2DB1182Q Package Outline Dimensions E TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 2.286 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm A b3 c2 L3 A2 D E1 H L4 A1 L e 2X b2 3X b a Suggested Pad Layout X2 Y2 C Y1 X1 2DB1182Q Document number: DS35651 Rev.
PAGE 5
2DB1182Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.