Datasheet

SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 - JUNE 1996
PARTMARKING DETAILS 
BCW67A  DA BCW67AR  4W
BCW67B  DB BCW67BR  5W
BCW67C  DC BCW67CR  6W
BCW68F  DF BCW68FR  7T
BCW68G  DG BCW68GR  5T
BCW68H  DH BCW68HR  7N
COMPLEMENTARY TYPES 
BCW67  BCW65
BCW68  BCW66
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCW67 BCW68 UNIT
Collector-Emitter Voltage V
CES
-45 -60 V
Collector-Emitter Voltage V
CEO
-32 -45 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current(10ms) I
CM
-1000 mA
Continuous Collector Current I
C
-800 mA
Base Current I
B
-100 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
BCW67
BCW68
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
BCW67
BCW68
V
(BR)CEO
-32
-45
VI
CEO
=-10mA
I
CEO
=-10mA
BCW67
BCW68
V
(BR)CES
-45
-60
I
C
=-10µA
I
C
=-10µA
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 V
I
EBO
=-10µA
Collector-Emitter
Cut-off Current
BCW67
BCW68
I
CES
-20
-10
-20
-10
nA
µA
nA
µA
V
CES
=-32V
V
CES
=-32V ,T
amb
=150
°
C
V
CES
=-45V
V
CES
=-45V , T
amb
=150°C
Emitter-Base Cut-Off Current I
EBO
-20 nA V
EBO
=-4V
Collector-Emitter Saturation Voltage V
CE(sat)
-0.7
-0.3 V
V
I
C
=-100mA, I
B
= - 10mA
I
C
= -500mA, I
B
=-50mA*
Base-Emitter Saturation Voltage V
BE(sat)
-2 V I
C
=-500mA, I
B
=-50mA*
Static
Forward
Current
Transfer
BCW67A
BCW68F
h
FE
75
100
35
170 250
I
C
=-10mA, V
CE
=-1V
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
BCW67B
BCW68G
h
FE
120
160
60
250 400
I
C
=-10mA, V
CE
=-1V
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
BCW67C
BCW68H
h
FE
180
250
100
350 630
I
C
=-10mA, V
CE
=-1V
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-2V*
Transition Frequency f
T
100 MHz I
C
=-20mA, V
CE
=-10V
f = 100MHz
Collector-Base Capacitance C
cbo
12 18 pF V
CBO
=-10V, f =1MHz
Emitter-Base Capacitance C
ebo
80 pF V
EBO
=-0.5V, f =1MHz
Noise Figure N 2 10 dB I
C
= -0.2mA, V
CE
=- 5V
R
G
=1KΩ, f=1KH
∆f=200Hz
Switching times:
Turn-On Time
Turn-Off Time
t
on
t
off
100
400
ns
ns
I
C
=-150mA
I
B1
=- I
B2
=-15mA
R
L
=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
C
B
E
SOT23
BCW67
BCW68
3 - 293 - 30