User's Manual

Table Of Contents
S3C2450X RISC MICROPROCESSOR ELECTRICAL DATA
29-5
Table 29-5. Special Memory DDR I/O PAD DC Electrical Characteristics
V
DD
=1.7V~2.7V, Vext = 3.0~3.6V , T
A
= -40 to 85°C
Parameter Condition Min Typ Max Unit
VDD Power Off 2.7 V
VDD=2.5V 3.6
Vtol
Tolerant external
voltage**
VDD Power
On
VDD=1.8V 3.6
V
High Level Input Voltage
Vih
LVCMOS Interface 0.7VDD VDD+0.3 V
Low Level Input Voltage
Vil
LVCMOS Interface -0.3 0.3VDD V
ΔV Hysteresis Voltage 0.1VDD V
High Level Input Current
Input Buffer Vin=VDD -10 10 uA
Tolerant Input
Buffer**
Vin=Vext -10 10 uA
VDD=2.5V 10 40 80
Input Buffer with
pull-down
Vin=VDD
VDD=1.8V 5 20 40
uA
Vin=3.3V VDD=2.5V 3 10 40
Iih
Tolerant Input
Buffer with pull-
up**
Vin=3.3V VDD=1.8V 1 4 10
uA
Low Level Input Current
Input Buffer Vin=VSS -10 10 uA
VDD=2.5V -80 -40 -10
Iil
Input Buffer with
pull-up
Vin=VSS
VDD=1.8V -40 -20 -5
uA
Voh Type A,B,C Ioh=-100uA VDD-0.2 V
Vol Type A,B,C Iol=100uA 0.2 V
Ioz
Tri-State Output
Leakage Current
Vout=VSS or VDD -10 10 uA
C
IN
Input capacitance
Any input and Bidirectional
buffers
5 pF
C
OUT
Output
capacitance
Any output buffer
5 pF
NOTE: **specification is only available on tolerant cells.
Driver Type A, B, C : Refer to DC currents table of output driver.
The specification is basically referred to JEDEC JESD8 standard and have extended interface voltage range of
1.7V~2.7V
The specification can be changed depending on interface voltage