Data Sheet

MCP2515
DS21801D-page 70 Preliminary © 2005 Microchip Technology Inc.
TABLE 13-1: DC CHARACTERISTICS
DC Characteristics
Industrial (I): TAMB = -40°C to +85°C VDD = 2.7V to 5.5V
Extended (E): T
AMB = -40°C to +125°C VDD = 4.5V to 5.5V
Param.
No. Sym Characteristic Min Max Units Conditions
V
DD Supply Voltage 2.7 5.5 V
V
RET Register Retention Voltage 2.4 — V
High-Level Input Voltage
V
IH RXCAN 2 VDD + 1 V
SCK, CS
, SI, TXnRTS Pins 0.7 VDD VDD + 1 V
OSC1 0.85 V
DD VDD V
RESET 0.85 V
DD VDD V
Low-Level Input Voltage
V
IL RXCAN, TXnRTS Pins -0.3 .15 VDD V
SCK, CS
, SI -0.3 0.4 V
OSC1 V
SS .3 VDD V
RESET V
SS .15 VDD V
Low-Level Output Voltage
V
OL TXCAN — 0.6 V IOL = +6.0 mA, VDD = 4.5V
RXnBF
Pins — 0.6 V IOL = +8.5 mA, VDD = 4.5V
SO, CLKOUT — 0.6 V I
OL = +2.1 mA, VDD = 4.5V
INT
—0.6VIOL = +1.6 mA, VDD = 4.5V
High-Level Output Voltage V
V
OH TXCAN, RXnBF Pins VDD – 0.7 — V IOH = -3.0 mA, VDD = 4.5V
SO, CLKOUT V
DD – 0.5 — V IOH = -400 µA, VDD = 4.5V
INT
VDD – 0.7 — V IOH = -1.0 mA, VDD = 4.5V
Input Leakage Current
I
LI All I/O except OSC1 and
TXnRTS pins
-1 +1 µA CS = RESET = VDD,
V
IN = VSS to VDD
OSC1 Pin -5 +5 µA
C
INT Internal Capacitance
(All Inputs and Outputs)
—7pFTAMB = 25°C, f
C
= 1.0 MHz,
V
DD = 0V (Note 1)
I
DD Operating Current — 10 mA VDD = 5.5V, FOSC = 25 MHz,
F
CLK = 1 MHz, SO = Open
I
DDS Standby Current (Sleep mode) — 5 µA CS, TXnRTS = VDD, Inputs tied to
V
DD or VSS, -40°C TO +85°C
—8µACS,
TXnRTS = VDD, Inputs tied to
V
DD or VSS, -40°C TO +125°C
Note 1: This parameter is periodically sampled and not 100% tested.