Datasheet
DTM67207B
2 GB – 200-Pin Unbuffered non-ECC DDR2 SO-DIMM
Document 06553, Revision A, 08-Jul-09, Dataram Corporation © 2009 Page 9
SDRAM Device Attributes: CAS Latency 18
TBD -
TBD -
Latency = 2 -
Latency = 3 - X
Latency = 4 - X
Latency = 5 -
Latency = 6 -
18
TBD -
19 DIMM Mechanical Characteristics. Max. module thickness. (mm) x </= 3.80 01
DIMM type information 04
Regular RDIMM (133.35mm) -
Regular UDIMM (133.35mm) -
SODIMM (67.6mm) - X
Micro-DIMM (45.5mm) -
Mini RDIMM (82.0mm) -
Mini UDIMM (82.0mm) -
TBD -
20
TBD -
SDRAM Module Attributes (Refer to Byte 20 for DIMM type information) 00
Number of active registers on the DIMM (N/A for SODIMM) - 1
Number of PLL on the DIMM (N/A for UDIMM) - 0
FET Switch External Enable - No
TBD -
Analysis probe installed - No
21
TBD -
SDRAM Device Attributes: General 02
Includes Weak Driver -
Supports 50 ohm ODT - X
Supports PASR (Partial Array Self Refresh) -
TBD -
TBD -
TBD -
TBD -
22
TBD -
23 Minimum Clock Cycle Time at Reduced CAS Latency, CL = X-1 (ns) 5 50
24
Maximum Data Access Time (t
AC
) from Clock at CL = X-1 (ns)
0.5
50
25 Minimum Clock Cycle Time at CL = X-2 (ns) UNUSED 00
26 Maximum Data Access Time (t
AC
) from Clock at CL = X-2 (ns) UNUSED 00
27 Minimum Row Precharge Time (t
RP
) (ns) 15 3C
28 Minimum Row Active to Row Active Delay (t
RRD
) (ns) 7.5 1E
29 Minimum RAS to CAS Delay (t
RCD
) (ns) 15 3C
30 Minimum Active to Precharge Time (t
RAS
) (ns) 45 2D