Datasheet

DTM67207B
2 GB – 200-Pin Unbuffered non-ECC DDR2 SO-DIMM
Document 06553, Revision A, 08-Jul-09, Dataram Corporation © 2009 Page 11
54
DRAM Case temperature Rise from Ambient due to Active Power-Down with
Slow PDN Exit (DT3Pslow). (C)
UNUSED 1E
DRAM Case Temperature Rise from Ambient due to Page Open Burst
Read/DT4R4W Mode Bit (DT4R/DT4R4W Mode Bit). (C)
2E
Bit 0: "0" if DT4W is greater than DT4R - 0
55
Bits 1:7 - DT4R - 0
56
DRAM Case Temperature Rise from Ambient due to Burst Refresh (DT5B).
(C)
UNUSED 1F
57
DRAM Case Temperature Rise from Ambient due to Bank Interleave Reads
with Auto-Precharge (DT7). (C)
UNUSED 28
58
Thermal Resistance of PLL Package from Top to Ambient (Psi T-A PLL).
(C/Watt).
UNUSED 00
59
Thermal Resistance of Register Package from Top to Ambient ( Psi T-A
Register). (C/Watt).
UNUSED 00
60
PLL Case Temperature Rise from Ambient due to PLL Active (DT PLL Ac-
tive). (C).
UNUSED 00
Register Case Temperature Rise from Ambient due to Register Active/Mode
Bit (DT Register Active/Mode Bit).
00
Bit 0: If "0" Unit for Bits 2:7 is 0.75C - 0.75
Bit 1: RFU. Default: 0 - 0
61
Bits 2:7 - Register Active - 0
62 SPD Revision Revision 1.2 12
63 Checksum for Bytes 0-62 [Checksum] 1F
64 Module Manufacturer’s JEDEC ID Code Dataram ID 7F
65 Module Manufacturer’s JEDEC ID Code Dataram ID 91
66-71 Module Manufacturer’s JEDEC ID Code UNUSED 00
72 Module Manufacturing Location UNUSED 00
73-90 Module Part Number [Space] 20
91,92 Module Revision Code UNUSED 00
93,94 Module Manufacturing Date [Date Code] ##
95-98 Module Serial Number [Serial Number]##
99-127 Manufacturer’s Specific Data UNUSED 00