Datasheet

DTM63344E

2 GB, 240-Pin Unbuffered ECC DDR2 DIMM

SODIMM (67.6mm) -

Micro-DIMM (45.5mm) -

Mini RDIMM (82.0mm) -

Mini UDIMM (82.0mm) -

TBD -

21 SDRAM Module Attributes (Refer to Byte20 for DIMM type information). 0x00

Number of active registers on the DIMM (N/A for UDIMM) - 0

Number of PLL on the DIMM (N/A for UDIMM) - 0

FET Switch External Enable - No

TBD -

Analysis probe installed - No

TBD -

22 SDRAM Device Attributes: General 0x03

Includes Weak Driver - X

Supports 50 ohm ODT - X

Supports PASR (Partial Array Self Refresh) -

TBD -

23 Minimum Clock Cycle Time at Reduced CAS Latency, CL = X-1 (ns) 3.75 0x3D

24 Maximum Data Access Time (tAC ) from Clock at CL = X- 1 (ns) 0.45 0x45

25 Minimum Clock Cycle Time at CL = X-2 (ns) UNUSED 0x00

26 Maximum Data Access Time (tAC ) from Clock at CL = X-2 (ns) UNUSED 0x00

27 Minimum Row Precharge Time (tRP ) (ns) 15 0x3C

28 Minimum Row Active to Row Active Delay (tRRD ) (ns) 7.5 0x1E

29 Minimum RAS to CAS Delay (tRCD ) (ns) 15 0x3C

30 Minimum Active to Precharge Time (tRAS ) (ns) 45 0x2D

31 Module Rank Density 1GB 0x01

32 Address and Command Setup Time Before Clock (tIS) (ns) 0.2 0x20

33 Address and Command Hold Time After Clock (tIH) (ns) 0.27 0x27

34 Data Input Setup Time Before Strobe (tDS) (ns) 0.1 0x10

35 Data Input Hold Time After Strobe (tDH) (ns) 0.17 0x17

36 Write Recovery Time (tWR ) (ns) 15 0x3C

37 Internal write to read command delay (tWTR ) (ns) 7.5 0x1E

38 Internal read to precharge command delay (tRTP ) (ns) 7.5 0x1E

39 Memory Analysis Probe Characteristics. UNUSED 0x00

40 Extension of Byte 41(tRC) and Byte 42 (tRFC) (ns) 0x06

Add this value to byte 41 - 0

Add this value to byte 42 - 0.5

41 SDRAM Device Minimum Active to Active/Auto Refresh Time (tRC)

(ns)

60 0x3C

42 SDRAM Device Minimum Auto-Refresh to Active/Auto-Refresh

Command Period (tRFC). (ns)

127.5 0x7F

43 SDRAM Device Maximum Cycle Time (tCK max). (ns) 8 0x80