Specifications
CY14B101P
Document Number: 001-44109 Rev. *O Page 34 of 36
Document History Page
Document Title: CY14B101P, 1-Mbit (128 K × 8) Serial SPI nvSRAM with Real Time Clock
Document Number: 001-44109
Rev. ECN
Orig. of
Change
Submission
Date
Description of Change
** 1939467 UNC /
AESA
01/16/2008 New data sheet.
*A 2607447 GSIN /
GVCH /
AESA
11/21/2008 Updated the “Feature” section, Clock rate changed from 40 MHz to 25 MHz
Updated nvSRAM STORE, RECALL, AutoStore Enable/Disable sections
-- Removed Soft Sequence, added SPI instructions for STORE, RECALL, Au-
toStore Enable and Disable, Updated SPI with following changes:
-- Added more information for protocol
-- Added four new SPI instruction
-- WEN bit cleared on CS going HIGH edge after Write instructions and four
nvSRAM special instructions
-- Added RDY
bit to Status Register for indicating Store/Recall in progress
Added READ RTC and WRITE RTC instructions.
Changed RTC recommended configuration values.
Updated tOCS values for normal and room temperature
Other changes as per new EROS
-- Removed 8 SOIC package
-- Added two new 8DFN packages
-- Changed tCO parameter to 9 ns
-- Updated data sheet template
-- Replaced CY14B101P with CY14B101PA.
Changed title to “CY14B101PA 1Mbit (128K x 8) Serial SPI nvSRAM with Re-
al-Time-Clock”
*B 2654487 GVCH /
GSIN /
PYRS
02/04/2009 Moved from Advance information to Preliminary
Changed part number from CY14B101PA to CY14B101P
Changed X
1
, X
2
pin names to X
out
, X
in
respectively
Updated pin description of V
CAP
pin
Updated Device operation and SPI peripheral interface description
Added Factory setting values for BP1, BP2 and WPEN bits
Updated Real Time Clock operation description
Added footnote 2
Added default values to RTC Register Map” table 8
Added footnote 3
Updated flag register description in Register Map Detail” table 9
Changed C1, C2 values to 21pF, 21pF respectively
Changed I
CC2
from 5 mA to 10 mA
Changed I
BAK
value from 350 nA to 450 nA at hot temperature
Changed V
RTCcap
typical
value from 2.4V to 3.0V
*C 2733293 GVCH 07/08/2009 Added note in AutoStore Operation description
Changed C1, C2 values from 21pF, 21pF to 10pF, 67pF respectively
Added best practices
Updated test condition of I
CC1
and I
SB
Updated I
BAK
and V
RTCcap
parameter values
Added R
BKCHG
parameter to RTC characteristics table
Updated V
HDIS
and t
DELAY
parameter description
*D 2757375 GVCH 08/28/2009 Moved data sheet status from preliminary to Final
Removed commercial temperature related specs
Added thermal resistance values for 16-SOIC package
Added note to Write Sequence (WRITE) description
Changed V
RTCbat
max value from 3.3V to 3.6V
Changed R
BKCHG
min value from 450to 350
Updated footnote 8
Not Recommended for New Designs