Specifications

CY8C21123/CY8C21223/CY8C21323
Document Number: 38-12022 Rev. *Y Page 22 of 46
DC Programming Specifications
Table 20 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C  T
A
 85 °C, 3.0 V to 3.6 V and –40 °C  T
A
 85 °C, or 2.4 V to 3.0 V and –40 °C  T
A
 85 °C, respectively. Typical parameters
apply to 5 V, 3.3 V, or 2.7 V at 25 °C and are for design guidance only.
DC I
2
C Specifications
Table 20 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C  T
A
 85 °C, 3.0 V to 3.6 V and –40 °C  T
A
 85 °C, or 2.4 V to 3.0 V and –40 °C  T
A
 85 °C, respectively. Typical parameters
apply to 5 V, 3.3 V, or 2.7 V at 25 °C and are for design guidance only.
Table 20. DC Programming Specifications
Symbol Description Min Typ Max Units Notes
V
DDP
V
DD
for programming and erase 4.5 5.0 5.5 V This specification applies to
the functional requirements
of external programmer tools
V
DDLV
Low V
DD
for verify 2.4 2.5 2.6 V This specification applies to
the functional requirements
of external programmer tools
V
DDHV
High V
DD
for verify 5.1 5.2 5.3 V This specification applies to
the functional requirements
of external programmer tools
V
DDIWRITE
Supply voltage for flash write operations 2.70 – 5.25 V This specification applies to
this device when it is
executing internal flash
writes
I
DDP
Supply current during programming or verify – 5 25 mA
V
ILP
Input low voltage during programming or verify – – 0.8 V
V
IHP
Input high voltage during programming or verify 2.2 – – V
I
ILP
Input current when applying V
ILP
to P1[0] or P1[1]
during programming or verify
– – 0.2 mA Driving internal pull-down
resistor
I
IHP
Input current when applying V
IHP
to P1[0] or P1[1]
during programming or verify
– – 1.5 mA Driving internal pull-down
resistor
V
OLV
Output low voltage during programming or verify – – V
SS
+ 0.75 V
V
OHV
Output high voltage during programming or verify V
DD
– 1.0 – V
DD
V
Flash
ENPB
Flash endurance (per block) 50,000
[11]
– – – Erase/write cycles per block
Flash
ENT
Flash endurance (total)
[12]
1,800,000
0
–
0
–
0
–
0
Erase/write cycles
Flash
DR
Flash data retention 10 – – Years
Notes
11. The 50,000 cycle flash endurance per block is guaranteed if the flash is operating within one voltage range. Voltage ranges are 2.4 V to 3.0 V, 3.0 V to 3.6 V,
and 4.75 V to 5.25 V.
12. A maximum of 36 × 50,000 block endurance cycles is allowed. This may be balanced between operations on 36 × 1 blocks of 50,000 maximum cycles each, 36 × 2
blocks of 25,000 maximum cycles each, or 36 × 4 blocks of 12,500 maximum cycles each (and so forth to limit the total number of cycles to 36 × 50,000 and that no
single block ever sees more than 50,000 cycles).For the full industrial range, you must employ a temperature sensor user module (FlashTemp) and feed the result to
the temperature argument before writing. Refer to the application note, Design Aids — Reading and Writing PSoC
®
Flash – AN2015 for more information on Flash APIs.
13. All GPIO meet the DC GPIO V
IL
and V
IH
specifications mentioned in section DC GPIO Specifications on page 18. The I
2
C GPIO pins also meet the mentioned specs.
Table 21. DC I
2
C Specifications
[13]
Symbol Description Min Typ Max Units Notes
V
ILI2C
Input low level – – 0.3 × V
DD
V 2.4 V V
DD
3.6 V
––0.25 × V
DD
V4.75 V V
DD
5.25 V
V
IHI2C
Input high level 0.7 × V
DD
– – V 2.4 V V
DD
5.25 V