Specifications
CY8C21123/CY8C21223/CY8C21323
Document Number: 38-12022 Rev. *Y Page 17 of 46
Operating Temperature
DC Electrical Characteristics
DC Chip-Level Specifications
Table 12 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C T
A
85 °C, 3.0 V to 3.6 V and –40 °C T
A
85 °C, or 2.4 V to 3.0 V and –40 °C T
A
85 °C, respectively. Typical parameters
apply to 5 V, 3.3 V, or 2.7 V at 25 °C and are for design guidance only.
Table 11. Operating Temperature
Symbol Description Min Typ Max Units Notes
T
A
Ambient temperature –40 – +85 °C
T
J
Junction temperature –40 – +100 °C The temperature rise from
ambient to junction is package
specific. SeeTable 36 on page
34. You must limit the power
consumption to comply with this
requirement.
Table 12. DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
V
DD
Supply voltage 2.40 – 5.25 V See DC POR and LVD
specifications,
Table 19 on page 21.
I
DD
Supply current, IMO = 24 MHz – 3 4 mA Conditions are V
DD
= 5.0 V,
25 °C, CPU = 3 MHz, SYSCLK
doubler disabled. VC1 = 1.5 MHz
VC2 = 93.75 kHz
VC3 = 0.366 kHz
I
DD3
Supply current, IMO = 6 MHz – 1.2 2 mA Conditions are V
DD
= 3.3 V,
25 °C, CPU = 3 MHz, clock doubler
disabled. VC1 = 375 kHz
VC2 = 23.4 kHz
VC3 = 0.091 kHz
I
DD27
Supply current, IMO = 6 MHz – 1.1 1.5 mA Conditions are V
DD
= 2.55 V,
25 °C, CPU = 3 MHz, clock doubler
disabled. VC1 = 375 kHz VC2 =
23.4 kHz
VC3 = 0.091 kHz
I
SB27
Sleep (mode) current with POR, LVD, sleep
timer, WDT, and internal slow
oscillator active. Mid temperature range.
– 2.6 4 µA V
DD
= 2.55 V, 0 °C to 40 °C
I
SB
Sleep (mode) current with POR, LVD, sleep
timer, WDT, and internal slow
oscillator active.
– 2.8 5 µA V
DD
= 3.3 V, –40 °C T
A
85 °C
V
REF
Reference voltage (bandgap) 1.28 1.30 1.32 V Trimmed for appropriate V
DD
. V
DD
= 3.0 V to 5.25 V
V
REF27
Reference voltage (bandgap) 1.16 1.30 1.330 V Trimmed for appropriate V
DD
. V
DD
= 2.4 V to 3.0 V
AGND Analog ground V
REF
– 0.003 V
REF
V
REF
+ 0.003 V