Specifications

CY8C24123A
CY8C24223A
CY8C24423A
Document Number: 38-12028 Rev. *V Page 36 of 71
DC Programming Specifications
Tab le 27 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C  T
A
 85 °C, 3.0 V to 3.6 V and –40 °C  T
A
 85 °C, or 2.4 V to 3.0 V and –40 °C  T
A
 85 °C, respectively. Typical parameters
are measured at 5 V, 3.3 V, and 2.7 V at 25 °C and are for design guidance only.
DC I
2
C Specifications
Tab le 28 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C  T
A
 85 °C, 3.0 V to 3.6 V and –40 °C  T
A
 85 °C, or 2.4 V to 3.0 V and –40 °C  T
A
 85 °C, respectively. Typical parameters
are measured at 5 V, 3.3 V, and 2.7 V at 25 °C and are for design guidance only.
Table 27. DC Programming Specifications
Symbol Description Min Typ Max Units Notes
V
DDP
V
DD
for programming and erase 4.5 5 5.5 V This specification applies
to the functional require-
ments of external
programmer tools
V
DDLV
Low V
DD
for verify 2.4 2.5 2.6 V This specification applies
to the functional require-
ments of external
programmer tools
V
DDHV
High V
DD
for verify 5.1 5.2 5.3 V This specification applies
to the functional require-
ments of external
programmer tools
V
DDIWRITE
Supply voltage for flash write operation 2.7 5.25 V This specification applies
to this device when it is
executing internal flash
writes
I
DDP
Supply current during programming or verify – 5 25 mA
V
ILP
Input low voltage during programming or verify – – 0.8 V
V
IHP
Input high voltage during programming or verify 2.1 – – V
I
ILP
Input current when applying V
ILP
to P1[0] or P1[1]
during programming or verify
– – 0.2 mA Driving internal pull-down
resistor
I
IHP
Input current when applying V
IHP
to P1[0] or P1[1]
during programming or verify
– – 1.5 mA Driving internal pull-down
resistor
V
OLV
Output low voltage during programming or verify – – V
SS
+ 0.75 V
V
OHV
Output high voltage during programming or verify V
DD
– 1.0 – V
DD
V
Flash
ENPB
Flash endurance (per block) 50,000
[16]
– – – Erase/write cycles per
block
Flash
ENT
Flash endurance (total)
[17]
1,800,000 – – – Erase/write cycles
Flash
DR
Flash data retention 10 – – Years
Table 28. DC I
2
C Specifications
[18]
Symbol Description Min Typ Max Units Notes
V
ILI2C
Input low level – – 0.3 × V
DD
V 2.4 V V
DD
3.6 V
– – 0.25 × V
DD
V 4.75 V V
DD
5.25 V
V
IHI2C
Input high level 0.7 × V
DD
– – V 2.4 V V
DD
5.25 V
Notes
16. The 50,000 cycle flash endurance per block is only guaranteed if the flash is operating within one voltage range. Voltage ranges are 2.4 V to 3.0 V, 3.0 V to
3.6 V, and 4.75 V to 5.25 V.
17. A maximum of 36 × 50,000 block endurance cycles is allowed. This may be balanced between operations on 36 × 1 blocks of 50,000 maximum cycles each, 36 × 2
blocks of 25,000 maximum cycles each, or 36 × 4 blocks of 12,500 maximum cycles each (to limit the total number of cycles to 36 × 50,000 and that no single block
ever sees more than 50,000 cycles).
For the full industrial range, the user must employ a temperature sensor user module (FlashTemp) and feed the result to the temperature argument before writing.
Refer to the Flash APIs application note Design Aids – Reading and Writing PSoC
®
Flash – AN2015 for more information.
18. All GPIOs meet the DC GPIO V
IL
and V
IH
specifications found in the DC GPIO Specifications sections. The I
2
C GPIO pins also meet the above specs.