Specifications

CY8C24123A
CY8C24223A
CY8C24423A
Document Number: 38-12028 Rev. *V Page 19 of 71
Operating Temperature
DC Electrical Characteristics
DC Chip-Level Specifications
Tab le 11 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C  T
A
 85 °C, 3.0 V to 3.6 V and –40 °C  T
A
 85 °C, or 2.4 V to 3.0 V and –40 °C  T
A
 85 °C, respectively. Typical parameters
are measured at 5 V, 3.3 V, and 2.7 V at 25 °C and are for design guidance only.
Table 10. Operating Temperature
Symbol Description Min Typ Max Units Notes
T
A
Ambient temperature –40 – +85 °C
T
J
Junction temperature –40 – +100 °C The temperature rise from ambient to
junction is package specific. See
Table 48 on page 57. You must limit
the power consumption to comply with
this requirement
Table 11. DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
V
DD
Supply voltage 2.4 – 5.25 V See DC POR and LVD specifications,
Table 26 on page 35
I
DD
Supply current – 5 8 mA Conditions are V
DD
= 5.0 V, T
A
= 25 °C,
CPU = 3 MHz, SYSCLK doubler
disabled, VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 93.75 kHz,
analog power = off
SLIMO mode = 0. IMO = 24 MHz
I
DD3
Supply current – 3.3 6.0 mA Conditions are V
DD
= 3.3 V, T
A
= 25 °C,
CPU = 3 MHz, SYSCLK doubler
disabled, VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 93.75 kHz,
analog power = off. SLIMO mode = 0.
IMO = 24 MHz
I
DD27
Supply current – 2 4 mA Conditions are V
DD
= 2.7 V, T
A
= 25 °C,
CPU = 0.75 MHz, SYSCLK doubler
disabled, VC1 = 0.375 MHz,
VC2 = 23.44 kHz, VC3 = 0.09 kHz,
analog power = off. SLIMO mode = 1.
IMO = 6 MHz
I
SB
Sleep (mode) current with POR, LVD, sleep timer,
and WDT.
[10]
– 3 6.5 µA Conditions are with internal slow speed
oscillator, V
DD
= 3.3 V, –40 °C  T
A

55 °C, analog power = off
I
SBH
Sleep (mode) current with POR, LVD, sleep timer,
and WDT at high temperature.
[10]
– 4 25 µA Conditions are with internal slow speed
oscillator, V
DD
= 3.3 V, 55 °C < T
A

85 °C, analog power = off
I
SBXTL
Sleep (mode) current with POR, LVD, sleep timer,
WDT, and external crystal.
[10]
– 4 7.5 µA Conditions are with properly loaded,
1 µW max, 32.768 kHz crystal.
V
DD
= 3.3 V, –40 °C  T
A
 55 °C, analog
power = off
I
SBXTLH
Sleep (Mode) current with POR, LVD, sleep timer,
WDT, and external crystal at high temperature.
[10]
– 5 26 µA Conditions are with properly loaded,
1µW max, 32.768 kHz crystal.
V
DD
= 3.3 V, 55 °C < T
A
 85 °C, analog
power = off
V
REF
Reference voltage (Bandgap) 1.28 1.30 1.32 V Trimmed for appropriate V
DD
.
V
DD
> 3.0 V
V
REF27
Reference voltage (Bandgap) 1.16 1.30 1.32 V Trimmed for appropriate V
DD
.
V
DD
= 2.4 V to 3.0 V
Note
10. Standby current includes all functions (POR, LVD, WDT, sleep time) needed for reliable system operation. This must be compared with devices that have similar
functions enabled.