Specifications

CY8C24094, CY8C24794
CY8C24894, CY8C24994
Document Number: 38-12018 Rev. AH Page 35 of 64
10.3.10 DC Programming Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V
and –40 °C  T
A
 85 °C, or 3.0 V to 3.6 V and –40 °C  T
A
 85 °C, respectively. Typical parameters are measured at 5 V and 3.3 V
at 25 °C and are for design guidance only.
10.3.11 DC I
2
C Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V
and –40 °C  T
A
 85 °C, or 3.0 V to 3.6 V and –40 °C  T
A
 85 °C, respectively. Typical parameters are measured at 5 V and 3.3 V
at 25 °C and are for design guidance only.
Table 23. DC Programming Specifications
Symbol Description Min Typ Max Units Notes
V
DDP
V
DD
for programming and erase 4.5 5 5.5 V This specification applies to
the functional requirements
of external programmer tools
V
DDLV
Low V
DD
for verify 3 3.1 3.2 V This specification applies to
the functional requirements
of external programmer tools
V
DDHV
High V
DD
for verify 5.1 5.2 5.3 V This specification applies to
the functional requirements
of external programmer tools
V
DDIWRITE
Supply voltage for flash write operation 3 5.25 V This specification applies to
this device when it is
executing internal flash
writes
I
DDP
Supply current during programming or verify – 15 30 mA
V
ILP
Input low voltage during programming or verify – – 0.8 V
V
IHP
Input high voltage during programming or verify 2.1 – – V
I
ILP
Input current when applying V
ILP
to P1[0] or P1[1]
during programming or verify
– – 0.2 mA Driving internal pull-down
resistor.
I
IHP
Input current when applying V
IHP
to P1[0] or P1[1]
during programming or verify
– – 1.5 mA Driving internal pull-down
resistor.
V
OLV
Output low voltage during programming or verify – – V
SS
+ 0.75 V
V
OHV
Output high voltage during programming or verify V
DD
– 1.0 – V
DD
V
Flash
ENPB
Flash endurance (per block)
[19]
50,000 – – – Erase/write cycles per block.
Flash
ENT
Flash endurance (total)
[20]
1,800,000 – – – Erase/write cycles.
Flash
DR
Flash data retention 10 – – Years
Table 24. DC I
2
C Specifications
[21]
Symbol Description Min Typ Max Units Notes
V
ILI2C
Input low level – – 0.3 × V
DD
V 3.0 V V
DD
3.6 V
– – 0.25 × V
DD
V 4.75 V V
DD
5.25 V
V
IHI2C
Input high level 0.7 × V
DD
– – V 3.0 V V
DD
5.25 V
Notes
19. The 50,000 cycle flash endurance per block is only guaranteed if the flash is operating within one voltage range. Voltage ranges are 3.0 V to 3.6 V and 4.75 V to 5.25 V.
20. A maximum of 36 × 50,000 block endurance cycles is allowed. This may be balanced between operations on 36 × 1 blocks of 50,000 maximum cycles each,
36 × 2 blocks of 25,000 maximum cycles each, or 36 × 4 blocks of 12,500 maximum cycles each (to limit the total number of cycles to 36 × 50,000 and ensure that
no single block ever sees more than 50,000 cycles).
For the full industrial range, the user must employ a temperature sensor user module (FlashTemp) and feed the result to the temperature argument before writing.
See the Flash APIs application note Design Aids – Reading and Writing PSoC
®
Flash – AN2015 for more information.
21. All GPIOs meet the DC GPIO V
IL
and V
IH
specifications found in the DC GPIO Specifications sections. The I
2
C GPIO pins also meet the mentioned specifications.