Datasheet

CY8C21x34B
Document Number: 001-67345 Rev. *E Page 20 of 49
Operating Temperature
DC Electrical Characteristics
DC Chip-Level Specifications
Tab le 10 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C  T
A
 85 °C, 3.0 V to 3.6 V and –40 °C  T
A
 85 °C, or 2.4 V to 3.0 V and –40 °C  T
A
 85 °C, respectively. Typical parameters
are measured at 5 V, 3.3 V, or 2.7 V at 25 °C and are for design guidance only.
Symbol Description Min Typ Max Units Notes
T
A
Ambient temperature –40 – +85 °C
T
J
Junction temperature –40 – +100 °C The temperature rise from ambient to
junction is package specific. See Table
34 on page 37. You must limit the
power consumption to comply with this
requirement.
Table 10. DC Chip-level Specifications
Symbol Description Min Typ Max Units Notes
V
DD
Supply voltage 2.40 – 5.25 V See Table 18 on page 24
I
DD
Supply current, IMO = 24 MHz – 3 4 mA Conditions are V
DD
= 5.0 V,
T
A
= 25 °C, CPU = 3 MHz,
48 MHz disabled. VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 0.366 kHz
I
DD3
Supply current, IMO = 6 MHz using
SLIMO mode.
– 1.2 2 mA Conditions are V
DD
= 3.3 V,
T
A
= 25 °C, CPU = 3 MHz, clock
doubler disabled. VC1 = 375 kHz,
VC2 = 23.4 kHz, VC3 = 0.091 kHz
I
DD27
Supply current, IMO = 6 MHz using
SLIMO mode.
– 1.1 1.5 mA Conditions are V
DD
= 2.55 V,
T
A
= 25 °C, CPU = 3 MHz, clock
doubler disabled. VC1 = 375 kHz,
VC2 = 23.4 kHz, VC3 = 0.091 kHz
I
SB27
Sleep (mode) current with POR, LVD,
sleep timer, WDT, and internal slow
oscillator active. Mid temperature range.
– 2.6 4 µA V
DD
= 2.55 V, 0 °C T
A
 40 °C
I
SB
Sleep (mode) current with POR, LVD,
Sleep Timer, WDT, and internal slow
oscillator active.
– 2.8 5 µA V
DD
= 3.3 V, –40 °C T
A
 85 °C
V
REF
Reference voltage (Bandgap) 1.28 1.30 1.32 V Trimmed for appropriate V
DD
V
DD
= 3.0 V to 5.25 V
V
REF27
Reference voltage (Bandgap) 1.16 1.30 1.33 V Trimmed for appropriate V
DD
V
DD
= 2.4 V to 3.0 V
AGND Analog ground V
REF
– 0.003 V
REF
V
REF
+ 0.003 V