Datasheet

CY8C21634/CY8C21534/CY8C21434
CY8C21334/CY8C21234
Document Number: 38-12025 Rev. AF Page 19 of 55
Absolute Maximum Ratings
Symbol Description Min Typ Max Units Notes
T
STG
Storage temperature –55 25 +100 °C Higher storage temperatures
reduce data retention time.
Recommended storage
temperature is +25 °C ± 25 °C.
Extended duration storage
temperatures above 65 °C
degrade reliability.
T
BAKETEMP
Bake temperature – 125 See
package
label
°C
t
BAKETIME
Bake time See
package
label
– 72 Hours
T
A
Ambient temperature with power applied –40 – +85 °C
V
DD
Supply voltage on V
DD
relative to V
SS
–0.5 – +6.0 V
V
IO
DC input voltage V
SS
– 0.5 – V
DD
+ 0.5 V
V
IOZ
DC voltage applied to tri-state V
SS
– 0.5 – V
DD
+ 0.5 V
I
MIO
Maximum current into any port pin –25 – +50 mA
ESD Electrostatic discharge voltage 2000 – – V Human body model ESD.
LU Latch-up current – – 200 mA
Operating Temperature
Symbol Description Min Typ Max Units Notes
T
A
Ambient temperature –40 – +85 °C
T
J
Junction temperature –40 – +100 °C The temperature rise from ambient to
junction is package specific. See Tab l e
29 on page 38. You must limit the
power consumption to comply with this
requirement.