Datasheet
CY8C21634, CY8C21534, CY8C21434
CY8C21334, CY8C21234
Document Number: 38-12025 Rev. AB Page 24 of 53
DC Programming Specifications
Tab le 14 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C T
A
85 °C, 3.0 V to 3.6 V and –40 °C T
A
85 °C, or 2.4 V to 3.0 V and –40 °C T
A
85 °C, respectively. Typical parameters
are measured at 5 V, 3.3 V, or 2.7 V at 25 °C and are for design guidance only.
DC I
2
C Specifications
Tab le 15 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C
T
A
85 °C, 3.0 V to 3.6 V and –40 °C
T
A
85 °C, or 2.4 V to 3.0 V and –40 °C
T
A
85 °C, respectively. Typical parameters
are measured at 5 V, 3.3 V, or 2.7 V at 25 °C and are for design guidance only.
Table 14. DC Programming Specifications
Symbol Description Min Typ Max Units Notes
V
DDP
V
DD
for programming and erase 4.5 5 5.5 V This specification applies to the
functional requirements of external
programmer tools
V
DDLV
Low V
DD
for verify 2.4 2.5 2.6 V This specification applies to the
functional requirements of external
programmer tools
V
DDHV
High V
DD
for verify 5.1 5.2 5.3 V This specification applies to the
functional requirements of external
programmer tools
V
DDIWRITE
Supply voltage for flash write operation 2.7 5.25 V This specification applies to this
device when it is executing internal
flash writes
I
DDP
Supply current during programming or verify – 5 25 mA
V
ILP
Input low voltage during programming or verify – – 0.8 V
V
IHP
Input high voltage during programming or
verify
2.2 – – V
I
ILP
Input current when applying V
ILP
to P1[0] or
P1[1] during programming or verify
– – 0.2 mA Driving internal pull-down resistor
I
IHP
Input current when applying V
IHP
to P1[0] or
P1[1] during programming or verify
– – 1.5 mA Driving internal pull-down resistor
V
OLV
Output low voltage during programming or
verify
– – V
SS
+ 0.75 V
V
OHV
Output high voltage during programming or
verify
V
DD
– 1.0 – V
DD
V
Flash
ENPB
Flash endurance (per block) 50,000
[20]
– – – Erase/write cycles per block
Flash
ENT
Flash endurance (total)
[21]
1,800,000 – – – Erase/write cycles
Flash
DR
Flash data retention 10 – – Years
Table 15. DC I
2
C Specifications
[22]
Symbol Description Min Typ Max Units Notes
V
ILI2C
Input low level – – 0.3 × V
DD
V 2.4 V V
DD
3.6 V
– – 0.25 × V
DD
V 4.75 V V
DD
5.25 V
V
IHI2C
Input high level 0.7 × V
DD
– – V 2.4 V V
DD
5.25 V
Notes
20. The 50,000 cycle flash endurance per block is only guaranteed if the flash is operating within one voltage range. Voltage ranges are 2.4 V to 3.0 V, 3.0 V to 3.6 V,
and 4.75 V to 5.25 V.
21. A maximum of 36 × 50,000 block endurance cycles is allowed. This may be balanced between operations on 36 × 1 blocks of 50,000 maximum cycles each, 36×2
blocks of 25,000 maximum cycles each, or 36 × 4 blocks of 12,500 maximum cycles each (to limit the total number of cycles to 36 × 50,000 and ensure that no
single block ever sees more than 50,000 cycles). For the full industrial range, you must employ a temperature sensor user module (FlashTemp) and feed the result
to the temperature argument before writing. Refer to the Flash APIs application note AN2015 (Design Aids - Reading and Writing PSoC
®
Flash) for more information.
22. All GPIO meet the DC GPIO VIL and VIH specifications found in the DC GPIO Specifications sections. The I
2
C GPIO pins also meet the above specs.