Datasheet

CY7C1516KV18, CY7C1527KV18
CY7C1518KV18, CY7C1520KV18
Document Number: 001-00437 Rev. *J Page 24 of 33
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter Description Test Conditions Max Unit
C
IN
Input capacitance T
A
= 25°C, f = 1 MHz, V
DD
= 1.8 V, V
DDQ
= 1.5 V 4 pF
C
O
Output capacitance 4pF
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter Description Test Conditions
165 FBGA
Package
Unit
Θ
JA
Thermal resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
13.7 °C/W
Θ
JC
Thermal resistance
(Junction to Case)
3.73 °C/W
Figure 4. AC Test Loads and Waveforms
1.25 V
0.25 V
R = 50 Ω
5pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
Device
R
L
= 50 Ω
Z
0
= 50 Ω
V
REF
= 0.75 V
V
REF
= 0.75 V
[20]
0.75 V
Under
Test
0.75 V
Device
Under
Test
OUTPUT
0.75 V
V
REF
V
REF
OUTPUT
ZQ
ZQ
(a)
Slew Rate = 2 V/ns
RQ =
250
Ω
(b)
RQ =
250
Ω
Note
20. Unless otherwise noted, test conditions assume signal transition time of 2 V/ns, timing reference levels of 0.75 V, V
REF
= 0.75 V, RQ = 250Ω, V
DDQ
= 1.5 V, input pulse
levels of 0.25 V to 1.25 V, and output loading of the specified I
OL
/I
OH
and load capacitance shown in (a) of AC Test Loads and Waveforms.
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