Specifications

CY14C101PA
CY14B101PA
CY14E101PA
Document Number: 001-54392 Rev. *N Page 31 of 44
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Maximum accumulated storage time
At 150 C ambient temperature ...................... 1000 h
At 85 C ambient temperature ......................20 years
Maximum junction temperature ................................. 150 C
Supply voltage on V
CC
relative to V
SS
CY14C101PA: ...................................–0.5 V to +3.1 V
CY14B101PA: ...................................–0.5 V to +4.1 V
CY14E101PA: ...................................–0.5 V to +7.0 V
DC voltage applied to outputs
in High Z state .................................... –0.5 V to V
CC
+ 0.5 V
Input voltage .......................................–0.5 V to V
CC
+ 0.5 V
Transient voltage (<20 ns) on
any pin to ground potential ................. –2.0 V to V
CC
+ 2.0 V
Package power dissipation
capability (T
A
= 25 °C) ................................................. 1.0 W
Surface mount lead soldering
temperature (3 seconds) ......................................... +260 C
DC output current (1 output at a time, 1s duration). .... 15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) ......................... > 2001 V
Latch up current .................................................... > 140 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
CY14C101PA Industrial –40 C to +85 C 2.4 V to 2.6 V
CY14B101PA 2.7 V to 3.6 V
CY14E101PA 4.5 V to 5.5 V
DC Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions Min Typ
[8]
Max Unit
V
CC
Power supply CY14C101PA 2.4 2.5 2.6 V
CY14B101PA 2.7 3.0 3.6 V
CY14E101PA 4.5 5.0 5.5 V
I
CC1
Average V
CC
current f
SCK
= 40 MHz;
Values obtained without output
loads (I
OUT
= 0 mA)
CY14C101PA – – 3 mA
CY14B101PA
CY14E101PA – – 4 mA
f
SCK
= 104 MHz; Values obtained without output
loads (I
OUT
= 0 mA)
––10mA
I
CC2
Average V
CC
current
during STORE
All inputs don’t care, V
CC
= max
Average current for duration t
STORE
––3mA
I
CC3
Average V
CC
current
f
SCK
= 1 MHz;
V
CC
= V
CC
(Typ), 25 °C
All inputs cycling at CMOS levels.
Values obtained without output loads
(I
OUT
=0mA)
––1mA
I
CC4
Average V
CAP
current
during AutoStore cycle
All inputs don't care. Average current for duration
t
STORE
––3mA
I
SB
V
CC
standby current CS > (V
CC
– 0.2 V). V
IN
< 0.2 V or > (V
CC
– 0.2 V).
‘W’ bit set to ‘0’. Standby current level after
nonvolatile cycle is complete. Inputs are static.
f
SCK
= 0 MHz.
– – 250 A
I
ZZ
Sleep mode current t
SLEEP
time after SLEEP instruction is registered.
All inputs are static and configured at CMOS logic
level.
––8A
I
IX
[9]
Input leakage current
(except HSB
)
–1 – +1 A
Input leakage current (for
HSB
)
–100 – +1 A
Notes
8. Typical values are at 25 °C, V
CC
= V
CC(Typ)
. Not 100% tested.
9. The HSB
pin has I
OUT
= -2 µA for V
OH
of 2.4 V when both active HIGH and LOW drivers are disabled. When they are enabled standard V
OH
and V
OL
are valid. This
parameter is characterized but not tested.