Datasheet
9-Mbit QDR
®
II SRAM 2-Word
Burst Architecture
CY7C1292DV18
CY7C1294DV18
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-00350 Rev. *E Revised October 19, 2010
Features
■ Separate independent read and write data ports
❐ Supports concurrent transactions
■ 250 MHz clock for high bandwidth
■ 2-Word Burst on all accesses
■ Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 500 MHz) at 250 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■ Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches
■ Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■ Single multiplexed address input bus latches address inputs
for both read and write ports
■ Separate Port Selects for depth expansion
■ Synchronous internally self-timed writes
■ Available in x 18 and x 36 configurations
■ Full data coherency, providing most current data
■ Core V
DD
= 1.8V (±0.1V); I/O V
DDQ
= 1.4V to V
DD
■ Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■ Variable drive HSTL output buffers
■ JTAG 1149.1 compatible test access port
■ Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1292DV18 – 512K x 18
CY7C1294DV18 – 256K x 36
Functional Description
The CY7C1292DV18 and CY7C1294DV18 are 1.8V
Synchronous Pipelined SRAMs, equipped with QDR
®
-II archi-
tecture. QDR II architecture consists of two separate ports to
access the memory array. The read port has dedicated Data
Outputs to support read operations and the write port has
dedicated Data Inputs to support write operations. QDR II archi-
tecture has separate data inputs and data outputs to completely
eliminate the need to “turn-around” the data bus required with
common I/O devices. Access to each port is accomplished
through a common address bus. The read address is latched on
the rising edge of the K clock and the write address is latched on
the rising edge of the K
clock. Accesses to the QDR II read and
write ports are completely independent of one another. To
maximize data throughput, both read and write ports are
equipped with Double Data Rate (DDR) interfaces. Each
address location is associated with two 18-bit words
(CY7C1292DV18) or 36-bit words (CY7C1294DV18) that burst
sequentially into or out of the device. Because data can be trans-
ferred into and out of the device on every rising edge of both input
clocks (K and K
and C and C), memory bandwidth is maximized
while simplifying system design by eliminating bus
“turn-arounds.”
Depth expansion is accomplished with Port Selects for each port.
Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K
input clocks. All data outputs pass through output
registers controlled by the C or C
(or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Selection Guide
Description 250 MHz 200 MHz 167 MHz Unit
Maximum Operating Frequency 250 200 167 MHz
Maximum Operating Current 600 550 500 mA