Datasheet

5 CMF10120D Rev. A
Typical Performance
Figure 13A and 13B. Typical Capacitances vs. Drain Voltage at V
GS
= 0V and f = 1 MHz
Figure 16. Resistive Switching Times vs.
External R
G
at V
DD
= 400V, I
D
= 10A
Figure 14. Typical C
OSS
Stored Energy
1
10
100
1000
10000
0 20 40 60 80 100 120 140 160 180 200
Capacitance (pF)
V
DS
(V)
C
iss
C
oss
C
rss
1
10
100
1000
10000
0 100 200 300 400 500 600 700 800
Capacitance (pF)
V
DS
(V)
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
35
40
0 100 200 300 400 500 600 700 800
E
oss
(µJ)
V
DS
(V)
0
500
1000
1500
2000
2500
0
1
2
3
4
5
6
7
8
9
10
11
0 0.001 0.002 0.003 0.004 0.005 0.006
V
DS
(V)
I
D
(A)
Time (sec)
I
D
V
DS
V
GS
= 0/20V
V
DD
= 50V
L = 20 mH
E
AS
= 1.2 J
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25
Time (nsec)
External Gate Resistor (Ω)
t
D(on)v
t
fv
t
rv
t
D(off)v
V
GS
= 0/20V
V
DD
= 400V
R
L
= 40 Ω
I
D
= 10 A
T
A
= 25
o
C
Figure 15. Typical Unclamped Inductive Switching
Waveforms Showing Avalanche Capability
0
10
20
30
40
50
60
70
80
90
0 5 10 15 20 25
Time (nsec)
External Gate Resistor (Ω)
t
D(on)v
t
fv
t
rv
t
D(off)v
V
GS
= 0/20V
V
DD
=800V
R
L
= 80 Ω
I
D
= 10 A
T
A
= 25
o
C
Figure 17. Resistive Switching Times vs.
External R
G
at V
DD
= 800V, I
D
= 10A