Datasheet
2 CMF10120D Rev.
A
Electrical Characteristics (T
C
= 25˚C unless otherwise specied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V
(BR)DSS
Drain-Source Breakdown Voltage 1200 V V
GS
=
0V, I
D
= 50μA
V
GS(th)
Gate Threshold Voltage
2.4 3.5
V
V
DS
= V
GS
, I
D
= 0.5 mA
Fig. 11
3.1 4.1 V
DS
= V
GS
, I
D
= 1.0 mA
1.8
V
V
DS
= V
GS
, I
D
= 0.5 mA, T
J
= 135ºC
2.3
V
V
DS
= V
GS
, I
D
= 1.0 mA, T
J
= 135ºC
I
DSS
Zero Gate Voltage Drain Current
0.5 50
μA
V
DS
= 1200V, V
GS
= 0V
5 150 V
DS
= 1200V, V
GS
= 0V, T
J
= 135ºC
I
GSS
Gate-Source Leakage Current 0.25 μA V
GS
= 20V, V
DS
= 0V
R
DS(on)
Drain-Source On-State Resistance
160 200
mΩ
V
GS
= 20V, I
D
= 10A
Fig. 3
190 240 V
GS
= 20V, I
D
= 10A, T
J
= 135ºC
g
fs
Transconductance
4.2
S
V
DS
=
20V, I
DS
=
10A
Fig. 6
3.9 V
DS
=
20V, I
DS
=
10A, T
J
= 135ºC
C
iss
Input Capacitance 928
pF
V
GS
= 0V
V
DS
= 800V
f = 1MHz
V
AC
= 25mV
Fig. 13
C
oss
Output Capacitance 63
C
rss
Reverse Transfer Capacitance 7.5
E
oss
C
oss
Stored Energy 32 μJ Fig 14
t
d(on)v
Turn-On Delay Time 8.8
ns
V
DD
= 800V, V
GS
= 0/20V
I
D
= 10A
R
G(ext)
= 2.5Ω, R
L
= 40Ω
Timing relative to V
DS
g. 17
t
fv
Fall Time 21
t
d(off)V
Turn-Off Delay Time 38
t
rV
Rise Time 34
R
G
Internal Gate Resistance 13.6 Ω f = 1MHz
,
V
AC
=
25mV
Built-in SiC Body Diode Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
SD
Diode Forward Voltage
3.5
V
V
GS
= -5V, I
F
=
5A,
T
J
= 25ºC
3.1 V
GS
= -2V, I
F
=
5A,
T
J
= 25ºC
t
rr
Reverse Recovery Time 138 ns
V
GS
= -5V, I
F
=
10A,
T
J
= 25ºC
V
R
= 800V,
di
F
/dt= 100A/μs
Fig. 22Q
rr
Reverse Recovery Charge 94 nC
I
rrm
Peak Reverse Recovery Current 1.57 A
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
R
θJC
Thermal Resistance from Junction to Case 0.66 0.82
K/W Fig. 7
R
θCS
Case to Sink, w/ Thermal Compound 0.25
R
θJA
Thermal Resistance From Junction to Ambient 40
Gate Charge Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
Q
gs
Gate to Source Charge 11.8
nC
V
DD
= 800V, V
GS
= 0/20V
I
D
=10A
Per JEDEC24 pg 27
Fig.12
Q
gd
Gate to Drain Charge 21.5
Q
g
Gate Charge Total 47.1