Datasheet

2 C4D20120A Rev. C
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
ForwardVoltage
1.5
2.2
1.8
3
V
I
F
=20AT
J
=25°C
I
F
=20AT
J
=175°C
I
R
ReverseCurrent
35
65
200
400
μA
V
R
=1200VT
J
=25°C
V
R
=1200VT
J
=175°C
Q
C
TotalCapacitiveCharge 99 nC
V
R
=800V,I
F
=20A
di/dt=200A/μs
T
J
=25°C
C TotalCapacitance
1500
93
67
pF
V
R
=0V,T
J
=25°C,f=1MHz
V
R
=400V,T
J
=25˚C,f=1MHz
V
R
=800V,T
J
=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
R
θJC
ThermalResistancefromJunction
toCase
0.62 °C/W
Typical Performance
Figure1.ForwardCharacteristics
0
5
10
15
20
25
30
35
40
0 1 2 3 4
Figure2.ReverseCharacteristics
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 500 1000 1500
T
J
=-55°C
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
T
J
=-55°C
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
I
F
(A)
V
F
(V) V
R
(V)
I
R
(mA)