Datasheet

1 C4D20120A Rev. C
C4D20120A
Silicon Carbide Schottky Diode
Z-Rec
®
RectifieR
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitching
• ExtremelyFastSwitching
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies 
• PowerFactorCorrection
• MotorDrives
Package
TO-220-2
Maximum Ratings (T
C
=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 1200 V
V
RSM
SurgePeakReverseVoltage 1300 V
V
R
DCPeakReverseVoltage 1200 V
I
F
ContinuousForwardCurrent
53.5
25.5
20
A
T
C
=25˚C
T
C
=135˚C
T
C
=150˚C
I
FRM
RepetitivePeakForwardSurgeCurrent
91
61
A
T
C
=25˚C,t
P
=10ms,HalfSinePulse
T
C
=110˚C,t
P
=10ms,HalfSinePulse
I
FSM
Non-RepetitiveForwardSurgeCurrent
130
110
A
T
C
=25˚C,t
P
=10ms,HalfSinePulse
T
C
=110˚C,t
P
=10ms,HalfSinePulse
I
F,Max
Non-RepetitivePeakForwardCurrent
1150
950
A
T
C
=25˚C,t
P
=10ms,Pulse
T
C
=110˚C,t
P
=10ms,Pulse
P
tot
PowerDissipation
242
104
W
T
C
=25˚C
T
C
=110˚C
T
J
OperatingJunctionRange
-55 to
+175
˚C
T
stg
StorageTemperatureRange
-55 to
+135
˚C
TO-220MountingTorque
1
8.8
Nm
lbf-in
M3Screw
6-32Screw
Part Number Package Marking
C4D20120A TO-220-2 C4D20120
PIN1
PIN2
CASE
V
RRM
=1200V
I
F
(T
C
=135˚C) = 25.5 A
Q
c
  =99nC