Datasheet

2 C4D10120E Rev. E
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
F
ForwardVoltage
1.5
2.2
1.8
3
V
I
F
=10AT
J
=25°C
I
F
=10AT
J
=175°C
I
R
ReverseCurrent
30
55
250
350
μA
V
R
=1200VT
J
=25°C
V
R
=1200VT
J
=175°C
Q
C
TotalCapacitiveCharge 52 nC
V
R
=800V,I
F
=10A
di/dt=200A/μs
T
J
=25°C
C TotalCapacitance
754
45
38
pF
V
R
=0V,T
J
=25°C,f=1MHz
V
R
=400V,T
J
=25˚C,f=1MHz
V
R
=800V,T
J
=25˚C,f=1MHz
E
C
CapacitanceStoredEnergy 14.5 μJ V
R
=800V Fig.7
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
R
θJC
TO-252PackageThermalResistancefromJunctiontoCase 0.88 °C/W
Typical Performance
Figure1.ForwardCharacteristics
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3 3.5 4
Figure2.ReverseCharacteristics
0
1
2
3
4
5
0 500 1000 1500 2000
I
F
(A)
V
F
(V)
I
R
(mA)
V
R
(V)
T
J
=-55°C
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
T
J
=-55°C
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C