Datasheet

1 C4D10120E Rev. E
C4D10120E
Silicon Carbide Schottky Diode
Z-Rec
®
RectifieR
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• PositiveTemperatureCoefcientonV
F
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SolarInverters 
• PowerFactorCorrection
Package
TO-252-2 
Part Number Package Marking
C4D10120E TO-252-2 C4D10120
PIN1
PIN2
CASE
Maximum Ratings (T
C
=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 1200 V
V
RSM
SurgePeakReverseVoltage 1300 V
V
DC
DCBlockingVoltage 1200 V
I
F
ContinuousForwardCurrent
33
16
10
A
T
C
=25˚C
T
C
=135˚C
T
C
=155˚C
I
FRM
RepetitivePeakForwardSurgeCurrent
47
31
A
T
C
=25˚C,t
P
=10ms,HalfSinepulse
T
C
=110˚C,t
P
=10ms,HalfSinepulse
I
FSM
Non-RepetitivePeakForwardSurge
Current
71
59
A
T
C
=25˚C,t
P
=10ms,HalfSinepulse
T
C
=110˚C,t
P
=10ms,HalfSinepulse
I
F,Max
Non-RepetitivePeakForwardCurrent
750
620
A
T
C
=25˚C,t
P
=10ms,Pulse
T
C
=110˚C,t
P
=10ms,Pulse
P
tot
PowerDissipation
170
74
W
T
C
=25˚C
T
C
=110˚C
T
J
OperatingJunctionRange
-55to
+175
˚C
T
stg
StorageTemperatureRange
-55to
+135
˚C
V
RRM
=1200V
I
F
(T
C
=135˚C) =16A
Q
c
  = 52nC