Datasheet

1 C4D02120E Rev. G
C4D02120E
Silicon Carbide Schottky Diode
Z-Rec
®
RectifieR
Features
• 1.2kVSchottkyRectier
• OptimizedforPFCBoostDiodeApplication
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• PositiveTemperatureCoefcientonV
F
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SolarInverters 
• PowerFactorCorrection
• LEDLightingPowerSupplies
• X-RayTubePowerDrivers
• EVChargingandPowerConversion
Package
TO-252-2
Part Number Package Marking
C4D02120E TO-252-2 C4D02120
PIN1
PIN2
CASE
Maximum Ratings (T
C
=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 1200 V
V
RSM
SurgePeakReverseVoltage 1300 V
V
DC
DCBlockingVoltage 1200 V
I
F
MaximumDCCurrent
9
4.5
2
A
T
C
=25˚C
T
C
=135˚C
T
C
=162˚C
I
FRM
RepetitivePeakForwardSurgeCurrent
14.4
10
A
T
C
=25˚C,t
P
=10ms,HalfSinepulse
T
C
=110˚C,t
P
=10ms,HalfSinepulse
I
FSM
Non-RepetitivePeakForwardSurgeCurrent
19
16.5
A
T
C
=25˚C,t
P
=10ms,HalfSinepulse
T
C
=110˚C,t
P
=10ms,HalfSinepulse
I
F,Max
Non-RepetitivePeakForwardCurrent
200
160
A
T
C
=25˚C,t
P
=10ms,Pulse
T
C
=110˚C,t
P
=10ms,Pulse
P
tot
PowerDissipation
51.7
22.4
W
T
C
=25˚C
T
C
=110˚C
T
J
OperatingJunctionRange
-55 to
+175
˚C
T
stg
StorageTemperatureRange
-55 to
+135
˚C
V
RRM
=1200V
I
F
(T
C
=135˚C) =4.5A
Q
c
  = 11nC