Datasheet

1 C3D08060G Rev. F
C3D08060G
Silicon Carbide Schottky Diode
Z-Rec
®
RectifieR
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonV
F
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
• AEC-Q101QualiedandPPAPCapable
Applications
• SwitchModePowerSupplies 
• PowerFactorCorrection
 -TypicalPFCP
out
:800W-1600W
• MotorDrives
 -TypicalPower:3HP-4HP 
Package
TO-263-2 
PIN1
PIN2
CASE
Part Number Package Marking
C3D08060G TO-263-2 C3D08060
Maximum Ratings (T
C
=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
V
RRM
RepetitivePeakReverseVoltage 600 V
V
RSM
SurgePeakReverseVoltage 600 V
V
DC
DCBlockingVoltage 600 V
I
F
ContinuousForwardCurrent
24
11
8
A
T
C
=25˚C
T
C
=135˚C
T
C
=152˚C
I
FRM
RepetitivePeakForwardSurgeCurrent
57
36
A
T
C
=25˚C,t
P
=10ms,HalfSineWave,D=0.3
T
C
=110˚C,t
P
=10ms,HalfSineWave,D=0.3
I
FSM
Non-RepetitivePeakForwardSurgeCurrent
80
60
A
T
C
=25˚C,t
p
=10mS,HalfSineWave,D=0.3
T
C
=110˚C,t
P
=10ms,HalfSineWave,D=0.3
I
FSM
Non-RepetitivePeakForwardSurgeCurrent 220 A T
C
=25˚C,t
P
=10µs,Pulse
P
tot
PowerDissipation
107
46
W
T
C
=25˚C
T
C
=110˚C
T
J
,T
stg
OperatingJunctionandStorageTemperature
-55to
+175
˚C
V
RRM
= 600 V
I
F
(T
C
=135˚C) =11A
Q
c
  = 21nC