Datasheet

7 C2M0080120D Rev. B
Typical Performance
0
100
200
300
400
500
600
700
800
900
1000
0 5 10 15 20 25 30
Switching Loss (uJ)
External Gate Resistor RG(ext) (Ohms)
E
Off
E
On
E
Total
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 20 A
V
GS
= -5/+20 V
FWD = C4D10120A
L = 142 μH
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
Time (ns)
External Gate Resistor, R
G(ext)
(Ohms)
Conditions:
T
J
= 25 °C
V
DD
= 800 V
R
L
= 40 Ω
V
GS
= -5/+20 V
t
d (off)
t
d (on)
t
f
t
r
0
100
200
300
400
500
600
-50 -25 0 25 50 75 100 125 150
Swithcing Loss (uJ)
Junction Temperature, T
J
(°C)
Conditions:
I
DS
= 20 A
V
DD
= 800 V
R
G(ext)
= 2.5 Ω
V
GS
= -5/+20 V
FWD = C4D10120A
L = 142 µH
E
Off
E
On
E
Total
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 27. Switching Times vs. R
G(ext)
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
Figure28.SwitchingTimesDenition
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150 175 200
Avalanche Current (A)
Time in Avalanche T
AV
(us)
Conditons:
V
DD
= 50 V
Figure 29. Single Avalanche SOA curve