Datasheet

4 C2M0080120D Rev. B
Typical Performance
Figure 8. Body Diode Characteristic at -55 ºC
Figure 9. Body Diode Characteristic at 25 ºC
0
10
20
30
40
0 2 4 6 8 10 12 14
Drain-Source Current, I
DS
(A)
Gate-Source Voltage, V
GS
(V)
Conditions:
V
DS
= 20 V
tp < 200 µs
T
J
= 150 °C
T
J
= -55 °C
T
J
= 25 °C
-70
-60
-50
-40
-30
-20
-10
0
-7
-6 -5
-4
-3 -2 -
1
0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(A)
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -5 V
Condition:
T
J
= -55 °C
t
p
< 200 µs
-70
-60
-50
-40
-30
-20
-10
0
-7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(A)
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -5 V
Condition:
T
J
= 25 °C
t
p
< 200 µs
-70
-60
-50
-40
-30
-20
-10
0
-7 -6 -5 -4 -3 -2 -1 0
Drain-Source Current, I
DS
(A)
Drain-Source Voltage, V
DS
(A)
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -5 V
Condition:
T
J
= 150 °C
t
p
< 200 µs
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-50 -25 0 25 50 75 100 125 150
Threshold Voltage, V
th
(V)
Junction Temperature T
J
(°C)
Conditons
V
DS
= 10 V
I
DS
= 5 mA
Figure 10. Body Diode Characteristic at 150 ºC
-5
0
5
10
15
20
25
0 10 20 30 40 50 60 70
Gate-Source Voltage, V
GS
(V)
Gate Charge, Q
G
(nC)
Conditions:
I
DS
= 20 A
I
GS
= 100 mA
V
DS
= 800 V
T
J
= 25 °C
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics