Datasheet

2 C2M0080120D Rev. B
Electrical Characteristics (T
C
=25˚Cunlessotherwisespecied)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V
(BR)DSS
Drain-Source Breakdown Voltage 1200 V V
GS
= 0 V, I
D
=100μA
V
GS(th)
Gate Threshold Voltage
2.4 3.0
V
V
DS
= 10V, I
D
= 5 mA
Fig. 11
1.8 2.3
V
V
DS
= 10V, I
D
= 5 mA, T
J
= 150ºC
I
DSS
Zero Gate Voltage Drain Current 1 100 μA V
DS
= 1200 V, V
GS
= 0 V
I
GSS
Gate-Source Leakage Current 250 nA V
GS
= 20 V, V
DS
= 0 V
R
DS(on)
Drain-Source On-State Resistance
80 98
mΩ
V
GS
= 20 V, I
D
= 20 A
Fig.
4, 5, 6
128 V
GS
= 20 V, I
D
= 20A, T
J
= 150ºC
g
fs
Transconductance
8.1
S
V
DS
= 20 V, I
DS
= 20 A
Fig. 7
7.8 V
DS
= 20 V, I
DS
= 20 A, T
J
= 150ºC
C
iss
Input Capacitance 950
pF
V
GS
= 0 V
V
DS
= 1000 V
f = 1 MHz
V
AC
= 25 mV
Fig.
17, 18
C
oss
Output Capacitance 80
C
rss
Reverse Transfer Capacitance 7.6
E
oss
C
oss
Stored Energy 45 μJ Fig. 16
E
AS
Avalanche Energy, Single Pluse 1 J I
D
= 20A, V
DD
= 50V Fig. 29
E
ON
Turn-On Switching Energy 265
μJ
V
DS
= 800 V, V
GS
= -5/20 V, I
D
=
20A, R
G(ext)
=2.5Ω,L=142μH
Fig. 25
E
OFF
Turn Off Switching Energy 135
t
d(on)
Turn-On Delay Time 11
ns
V
DD
= 800 V, V
GS
= -5/20 V
I
D
= 20 A, R
G(ext)
=2.5Ω,
R
L
=40Ω,TimingrelativetoV
DS
Per IEC60747-8-4 pg 83
Fig. 27
t
r
Rise Time 20
t
d(off)
Turn-Off Delay Time 23
t
f
Fall Time 19
R
G(int)
Internal Gate Resistance 4.6 Ω f = 1 MHz
,
V
AC
= 25 mV
Q
gs
Gate to Source Charge 15
nC
V
DS
= 800 V, V
GS
= -5/20 V
I
D
= 20 A
Per IEC60747-8-4 pg 21
Fig. 12Q
gd
Gate to Drain Charge 23
Q
g
Total Gate Charge 62
Reverse Diode Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
SD
Diode Forward Voltage
3.3 V V
GS
= - 5 V, I
SD
= 10 A
Fig. 8,
9, 10
3.1 V V
GS
= - 5 V, I
SD
= 10 A, T
J
= 150 °C
I
S
Continuous Diode Forward Current 36 A T
C
=25˚C Note 1
t
rr
Reverse Recover time 32 ns
V
GS
= - 5 V, I
SD
= 20 A, V
R
= 800 V
dif/dt = 2400 A/µs
Note 1
Q
rr
Reverse Recovery Charge 192 nC
I
rrm
Peak Reverse Recovery Current 10 A
Note(1):WhenusingSiCBodyDiodethemaximumrecommendedV
GS
= -5V
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
R
θJC
Thermal Resistance from Junction to Case 0.60 0.65
°C/W Fig. 21
R
θJA
Thermal Resistance From Junction to Ambient 40