Datasheet

1 C2M0080120D Rev. B
C2M0080120D
Silicon Carbide Power MOSFET
C2M
TM
MOSFET Technology
N-Channel Enhancement Mode
Features
• New C2M SiC MOSFET technlogy
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Halogen Free, RoHS Compliant
Benets
• HigherSystemEfciency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• High Voltage DC/DC Converters
• Motor Drives
• Switch Mode Power Supplies
• Pulsed Power applications
Package
TO-247-3
Part Number Package
C2M0080120D TO-247-3
V
DS
1200 V
I
D
@ 25˚C 36 A
R
DS(on)
80 mΩ
Maximum Ratings (T
C
=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
V
DSmax
Drain - Source Voltage 1200 V
V
GS
= 0 V, I
D
=100μA
V
GSmax
Gate - Source Voltage -10/+25 V Absolute maximum values
V
GSop
Gate - Source Voltage -5/+20 V Recommended operational values
I
D
Continuous Drain Current
36
A
V
GS
= 20 V, T
C
=25˚C
Fig. 19
24
V
GS
= 20 V, T
C
=100˚C
I
D(pulse)
Pulsed Drain Current 80 A
Pulse width t
P
limited by T
jmax
Fig. 22
P
D
Power Dissipation 192 W T
C
=25˚C,T
J
=150˚C Fig. 20
T
J
, T
stg
Operating Junction and Storage Temperature
-55 to
+150
˚C
T
L
Solder Temperature 260 ˚C 1.6mm(0.063”)fromcasefor10s
M
d
Mounting Torque
1
8.8
Nm
lbf-in
M3 or 6-32 screw